HER408
Taiwan Semiconductor
CREAT BY ART
4A, 1000V High Efficient Rectifier
FEATURES
- Negligible leakage sustain the high operation temperature
- High surge current capability
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
MECHANICAL DATA
Case:
DO-201AD
Molding compound, UL flammability classification rating 94V-0
Packing code with suffix "G" means green compound (halogen-free)
Terminal:
Pure tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Weight:
1.1 g (approximately)
DO-201AD
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum instantaneous forward voltage (Note 1)
@4A
Maximum reverse current @ rated VR
T
J
=25 °C
T
J
=125 °C
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
V
F
I
R
t
rr
R
θJA
T
J
T
STG
HER408
1000
700
1000
4
200
1.7
10
250
75
30
- 55 to +150
- 55 to +150
UNIT
V
V
V
A
A
V
μA
ns
°C/W
°C
°C
Maximum reverse recovery time (Note 2)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse Test with PW=300μs, 1% Duty Cycle
Note 2: Reverse Recovery Test Conditions: I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Document Number: DS_D1412014
Version: A14
HER408
Taiwan Semiconductor
CREAT BY ART
ORDER INFORMATION (EXAMPLE)
HER408 A0G
Green compound code
Packing code
Part no.
RATINGS AND CHARACTERISTICS CURVES
(T
A
=25°C unless otherwise noted)
FIG.1- MAXIMUM FORWARD CURRENT DERATING
CURVE
INSTANTANEOUS REVERSE CURRENT
(μA)
5
AVERAGE FORWARD CURRENT (A)
4
3
2
1
0
0
25
50
75
100
125
150
RESISTIVE OR
INDUCTIVE LOAD
1000
FIG. 2- TYPICAL REVERSE CHARACTERISTICS
100
T
J
=125°C
10
1
0.1
T
J
=25°C
0.01
0
20
40
60
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
100
LEAD TEMPERATURE (
o
C)
FIG. 4- TYPICAL FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT (A)
FIG. 3- MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT
PEAK FORWARD SURGE
CURRENT(A)
250
200
150
100
50
0
1
10
100
8.3ms Single Half Sine Wave
100
10
T
J
=125°C
1
T
J
=25°C
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
FORWARD VOLTAGE (V)
NUMBER OF CYCLES AT 60 Hz
Document Number: DS_D1412014
Version: A14
HER408
Taiwan Semiconductor
CREAT BY ART
FIG. 5- TYPICAL JUNCTION CAPACITANCE
175
JUNCTION CAPACITANCE (pF)
150
125
100
75
50
25
0
0.1
1
10
100
REVERSE VOLTAGE (V)
f=1.0MHz
Vsig=50mVp-p
PACKAGE OUTLINE DIMENSIONS
DO-201AD
DIM.
A
B
C
D
E
Unit (mm)
Min
5.00
1.20
25.40
8.50
25.40
Max
5.60
1.30
-
9.50
-
Unit (inch)
Min
0.197
0.048
1.000
0.335
1.000
Max
0.220
0.052
-
0.375
-
MARKING DIAGRAM
P/N =
G=
F=
Specific Device Code
Green Compound
Factory Code
YWW = Date Code
Document Number: DS_D1412014
Version: A14
HER408
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1412014
Version: A14
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