W3H128M72ER2-533SBI datasheet, PDF

W3H128M72ER2-533SBI: DescriptionDDR DRAM, 128MX72, 0.5ns, CMOS, PBGA255, 23 X 21 MM, 1.27 MM PITCH, PLASTIC, BGA-255; Categorystorage storage; File Size1MB，30 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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W3H128M72ER2-533SBI Overview

DDR DRAM, 128MX72, 0.5ns, CMOS, PBGA255, 23 X 21 MM, 1.27 MM PITCH, PLASTIC, BGA-255

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
Parts packaging code	BGA
package instruction	23 X 21 MM, 1.27 MM PITCH, PLASTIC, BGA-255
Contacts	255
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.5 ns
Other features	AUTO/SELF REFRESH
JESD-30 code	R-PBGA-B255
memory density	9663676416 bit
Memory IC Type	DDR DRAM
memory width	72
Number of functions	1
Number of ports	1
Number of terminals	255
word count	134217728 words
character code	128000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature	-40 °C
organize	128MX72
Package body material	PLASTIC/EPOXY
encapsulated code	BGA
Package shape	RECTANGULAR
Package form	GRID ARRAY
Certification status	Not Qualified
self refresh	YES
Maximum supply voltage (Vsup)	1.9 V
Minimum supply voltage (Vsup)	1.7 V
Nominal supply voltage (Vsup)	1.8 V
surface mount	YES
technology	CMOS
Temperature level	INDUSTRIAL
Terminal form	BALL
Terminal location	BOTTOM

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