2DB1386Q/R
20V PNP MEDIUM POWER TRANSISTOR IN SOT89
Features
BV
CEO
> -20V
I
C
= -5A high Continuous Current
Low saturation voltage V
CE(sat)
< -1V @ -4A
Complementary NPN Type: 2DD2098
Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT89
Mechanical Data
Case: SOT89
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Weight: 0.052 grams (approximate)
C
E
B
C
C
B
E
Top View
Device Symbol
Pin Out – Top View
Ordering Information
(Note 4)
Part Number
2DB1386Q-13
2DB1386Q-13R
2DB1386R-13
Notes:
Marking
KP3Q
KP3Q
KP3R
Reel size (inches)
13
13
13
Tape width (mm)
12
12
12
Quantity per reel
2,500
4,000
2,500
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen and Antimony free,"Green"
and Lead-Free.
3. Halogen and Antimony free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html
Marking Information
YWW
KP3x
KP3x = Product Type Marking Code,
where:
KP3Q = 2DB1386Q
KP3R = 2DB1386R
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code (01 – 53)
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
1 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Maximum Ratings
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Pulse Current
Base Current
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CM
I
B
Value
-30
-20
-6
-5
-10
-500
Unit
V
V
V
A
A
mA
Thermal Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 5)
Thermal Resistance, Junction to Ambient Air (Note 5)
Thermal Resistance, Junction to Leads (Note 6)
Operating and Storage Temperature Range
Notes:
Symbol
P
D
R
JA
R
θJL
T
J
, T
STG
Value
1
125
19
-55 to +150
Unit
W
°C/W
°C/W
°C
5. For a device surface mounted on 15mm x 15mm x 0.6mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
6. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
Max Power Dissipation (W)
Thermal Resistance (°C/W)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
120
100
80
60
40
20
0
100µ
1m
10m 100m
1
D=0.2
D=0.1
Single Pulse
D=0.05
D=0.5
10
100
1k
Temperature (°C)
Pulse Width (s)
Derating Curve
100
Transient Thermal Impedance
Max Power Dissipation (W)
Single Pulse. T
amb
=25°C
10
1
100µ
1m
10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
2 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ON CHARACTERISTICS (Note 7)
Collector-Emitter Saturation Voltage
DC Current Gain
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
Current Gain-Bandwidth Product
Notes:
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(SAT)
2DB1386Q
2DB1386R
h
FE
C
obo
f
T
Min
-30
-20
-6
120
180
Typ
-0.25
55
100
Max
-0.5
-0.5
-1.0
270
390
Unit
V
V
V
A
A
V
pF
MHz
Conditions
I
C
= -50µA, I
E
= 0
I
C
= -1mA, I
B
= 0
I
E
= -50µA, I
C
= 0
V
CB
= -20V, I
E
= 0
V
EB
= -5V, I
C
= 0
I
C
= -4A, I
B
= -0.1A
I
C
= -0.5A, V
CE
= -2V
V
CB
= -20V, I
E
= 0, f = 1MHz
V
CE
= -6V, I
E
= 50mA,
f = 30MHz
7. Measured under pulsed conditions. Pulse width
≤
300µs. Duty cycle
≤
2%.
Typical Electrical Characteristics
(@T
A
= +25°C, unless otherwise specified.)
400
350
300
h
FE
, DC CURRENT GAIN
T
A
= 85°C
T
A
= 150°C
V
CE
= -2V
2.0
1.8
-I
C
, COLLECTOR CURRENT (A)
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
I
B
= -2mA
I
B
= -4mA
I
B
= -6mA
I
B
= -8mA
I
B
= -10mA
250
200
150
100
50
0
0.001
T
A
= -55°C
T
A
= 25°C
0.01
0.1
1
-I
C
, COLLECTOR CURRENT (A)
Figure 1 Typical DC Current Gain
vs. Collector Current (2DB1386Q)
10
0
-V
CE
, COLLECTOR EMITTER VOLTAGE (V)
Figure 2 Typical Collector Current
vs. Collector-Emitter Voltage
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
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www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Typical Electrical Characteristics
0.4
(cont.)
V
BE(ON)
, BASE EMITTER TURN-ON VOLTAGE (V)
1.2
V
CE
= -2V
-V
CE(SAT)
, COLLECTOR EMITTER
SATURATION VOLTAGE (V)
0.3
I
C
/I
B
= 40
1.0
0.8
T
A
= -55°C
0.2
0.6
T
A
= 25°C
T
A
= 150°C
0.4
T
A
= 85°C
0.1
T
A
= 85°C
T
A
= 25°C
T
A
= -55°C
0.2
T
A
= 150°C
0
0.0001
0.001
0.01
0.1
1
10
-I
C
, COLLECTOR CURRENT (A)
Figure 3 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
0
0.0001
0.001
0.01
0.1
1
10
I
C
, COLLECTOR CURRENT (A)
Figure 4 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
V
BE(SAT)
, BASE EMITTER SATURATION VOLTAGE(V)
1.2
1.0
1,000
0.8
T
A
= -55°C
0.6
T
A
= 25°C
0.4
T
A
= 85°C
0.2
T
A
= 150°C
I
C
/I
B
= 40
0
0.0001
C
ob
, OUTPUT CAPACITANCE (pF)
10
100
0.001
0.01
0.1
1
10
V
R
, REVERSE VOLTAGE (V)
Figure 6 Typical Output Capacitance Characteristics
I
C
, COLLECTOR CURRENT (A)
Figure 5 Typical Base-Emitter Saturation Voltage
vs. Collector Current
120
100
f
T
, GAIN-BANDWIDTH PRODUCT
80
60
40
V
CE
= -6V
f = 30MHz
20
0
0
40
60
80
100
120
-I
C
, COLLECTOR CURRENT
Figure 7 Typical Gain-Bandwidth Product
vs. Collector Current
20
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
4 of 6
www.diodes.com
February 2013
© Diodes Incorporated
2DB1386Q/R
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
D1
00
0.2
R
1
C
H
E
H
B1
B
e
8° (4X)
L
A
SOT89
Dim
Min
Max
A
1.40
1.60
B
0.44
0.62
B1
0.35
0.54
C
0.35
0.44
D
4.40
4.60
D1
1.62
1.83
E
2.29
2.60
e
1.50 Typ
H
3.94
4.25
H1
2.63
2.93
L
0.89
1.20
All Dimensions in mm
D
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
X2 (2x)
Y3
Y
Y2
C
X (3x)
Y1
Y4
Dimensions Value (in mm)
X
0.900
X1
1.733
X2
0.416
Y
1.300
Y1
4.600
Y2
1.475
Y3
0.950
Y4
1.125
C
1.500
2DB1386Q/R
Document number: DS31147 Rev. 7 - 2
5 of 6
www.diodes.com
February 2013
© Diodes Incorporated
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