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KF5N50DZ-DS_15

Description
N CHANNEL MOS FIELD EFFECT TRANSISTOR
File Size381KB,6 Pages
ManufacturerKEC
Websitehttp://www.keccorp.com/
Download Datasheet View All

KF5N50DZ-DS_15 Overview

N CHANNEL MOS FIELD EFFECT TRANSISTOR

SEMICONDUCTOR
TECHNICAL DATA
General Description
This planar stripe MOSFET has better characteristics, such as fast
switching time, fast reverse recovery time, low on resistance, low gate
charge and excellent avalanche characteristics. It is mainly suitable for
electronic ballast and switching mode power supplies.
FEATURES
・V
DSS
= 500V, I
D
= 4.3A
・Drain-Source
ON Resistance : R
DS(ON)
=1.4Ω(Max) @V
GS
= 10V
・Qg(typ)
= 12nC
・t
rr
(typ) = 150ns (KF5N50DS)
・t
rr
(typ) = 300ns (KF5N50DZ)
1
2
KF5N50DZ/DS
N CHANNEL MOS FIELD
EFFECT TRANSISTOR
A
C
K
D
L
B
H
G
F
F
J
E
N
M
DIM MILLIMETERS
_
A
6.60 + 0.20
_
6.10 + 0.20
B
_
5.34 + 0.30
C
_
D
0.70 + 0.20
_
E
2.70 + 0.15
_
2.30 + 0.10
F
0.96 MAX
G
0.90 MAX
H
_
1.80 + 0.20
J
_
2.30 + 0.10
K
_
0.50 + 0.10
L
_
M
0.50 + 0.10
0.70 MIN
N
Max 0.1
O
3
MAXIMUM RATING
(Tc=25℃)
O
CHARACTERISTIC
Drain-Source Voltage
Gate-Source Voltage
@T
C
=25℃
Drain Current
@T
C
=100℃
Pulsed (Note1)
Single Pulsed Avalanche Energy
(Note 2)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Drain Power
Dissipation
Tc=25℃
SYMBOL
V
DSS
V
GSS
I
D
RATING
500
±30
4.3
2.7
UNIT
V
V
DPAK (1)
A
I
DP
E
AS
E
AR
dv/dt
P
D
13
270
8.6
20
59.5
0.48
mJ
mJ
V/ns
W
W/℃
Derate above 25℃
T
j
T
stg
Maximum Junction Temperature
Storage Temperature Range
Thermal Characteristics
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-
Ambient
150
-55½150
R
thJC
R
thJA
2.1
110
℃/W
℃/W
PIN CONNECTION
(KF5N50DZ/DS)
D
G
S
2010. 9. 1
Revision No : 0
1/6
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