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EDI88128CS35NC

Description
Standard SRAM, 128KX8, 35ns, CMOS, CDSO32, SOJ-32
Categorystorage    storage   
ManufacturerMercury Systems Inc
Download Datasheet Parametric View All

EDI88128CS35NC Overview

Standard SRAM, 128KX8, 35ns, CMOS, CDSO32, SOJ-32

EDI88128CS35NC Parametric

Parameter NameAttribute value
MakerMercury Systems Inc
package instructionSOJ,
Reach Compliance Codeunknown
Maximum access time35 ns
JESD-30 codeR-CDSO-J32
length21.082 mm
memory density1048576 bit
Memory IC TypeSTANDARD SRAM
memory width8
Number of functions1
Number of terminals32
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature70 °C
Minimum operating temperature
organize128KX8
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeSOJ
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Parallel/SerialPARALLEL
Maximum seat height3.937 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL
Terminal formJ BEND
Terminal pitch1.27 mm
Terminal locationDUAL
width11.0998 mm
128Kx8 Monolithic SRAM
SMD 5962-89598
W3J1G64K-XPBX
FEATURES

Access Times of 15*, 17, 20, 25, 35, 45, 55ns

CS# and OE# Functions for Bus Control

2V Data Retention (EDI88128LPS)

TTL Compatible Inputs and Outputs

Fully Static, No Clocks

Organized as 128Kx8

Commercial, Industrial and Military Temperature Ranges

Thru-hole and Surface Mount Packages JEDEC Pinout
• 32 pin Ceramic DIP, 400 mil (Package 102)
• 32 pin Ceramic DIP, 600 mil (Package 9)
• 32 lead Ceramic ZIP (Package 100)
• 32 lead Ceramic SOJ (Package 140)
• 32 pad Ceramic LCC (Package 141)
• 32 lead Ceramic Flatpack (Package 142)

Single +5V (±10%) Supply OperationThe EDI88128CS is
a high speed, high performance, 128Kx8 megabit density
Monolithic CMOS Static RAM.
The device has eight bi-directional input-output lines to provide
simultaneous access to all bits in a word. An automatic power down
feature permits the on-chip circuitry to enter a very low standby
mode and be brought back into operation at a speed equal to the
address access time.
A Low Power version with 2V Data Retention (EDI88128LPS) is
also available for battery back-up opperation. Military product is
available compliant to MIL-PRF-38535.
* 15ns access time is advanced information, contact factory for availability.
This product is subject to change without notice.
FIGURE 1 – PIN CONFIGURATION
32 DIP
32 SOJ
32 LCC
32 FLATPACK
TOP VIEW
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
32 V
CC
31 A15
30 NC
29 WE#
28 A13
27 A8
26 A9
25 A11
24 OE#
23 A10
22 CS#
21 I/O7
20 I/O6
19 I/O5
18 I/O4
17 I/O3
NC
A16
A14
A12
A7
A6
A5
A4
A3
A2
A1
A0
I/O0
I/O1
I/O2
V
SS
PIN DESCRIPTION
32 ZIP
TOP VIEW
1
3
5
7
9
11
13
15
17
19
21
23
25
27
29
31
2 V
CC
4
A15
6
NC
8
WE#
10 A13
12 A8
14 A9
16 A11
18 OE#
20 A10
22 CS#
24 I/O7
26 I/O6
28 I/O5
30 I/O4
32 I/O3
A
0-16
I/O0-7
A0-16
WE#
CS#
OE#
VCC
VSS
NC
Data Inputs/Outputs
Address Inputs
Write Enable
Chip Select
Output Enable
Power (+5V ±10%)
Ground
Not Connected
BLOCK DIAGRAM
Memory Array
Address
Buffer
Address
Decoder
I/O
Circuits
I/O
0-7
WE#
CS#
OE#
Mercury Corp. - Memory and Storage Solutions • (602) 437-1520 • www.mrcy.com
1
4249.14E-0816-ss-EDI88128CS
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