LPM9017 datasheet, PDF - EEWORLD Datasheet

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LPM9017: DescriptionP-Channel Enhancement Mode Field Effect Transistor; File Size795KB，7 Pages; ManufacturerPower Innovations Limited; Websitehttp://www.power-innovations.com

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LPM9017 Overview

P-Channel Enhancement Mode Field Effect Transistor

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Preliminary Datasheet

LPM9017

LPM9017 -

-30V/4A

P-Channel Enhancement Mode Field Effect Transistor

General Description

The LPM9017 is the P-channel logic enhancement

mode power field effect transistors are produced using

high cell density, DMOS trench technology.

This high density process is especially tailored to

minimize on-state resistance.

These devices are particularly suited for low voltage

application, notebook computer power management

and other battery powered circuits where high-side

switching.

■

Features

■ -30V/-4A,R

DS(ON)

＜58mΩ(typ.)@V

=-10V

■ -30V/-3.0A,R

DS(ON)

＜68mΩ(typ.)@V

=-4.5V

■

Super high density cell design for extremely

low R

DS(ON)

SOT23 Package

Applications



Portable Media Players

Cellular and Smart mobile phone

LCD

DSC Sensor

Wireless Card

Ordering Information

LPM9017-

□ □

□



F: Pb-Free

Package Type

B3: SOT23

Marking Information

Please see website.

Pin Configurations

SOT23L(Top View)

LPM9017 – 00 Version 1.0 Datasheet

Dec.-2008

www.lowpowersemi.com

Page 1 of 7

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