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10N30_15

Description
N-CHANNEL POWER MOSFET
File Size150KB,4 Pages
ManufacturerUNISONIC TECHNOLOGIES CO.,LTD
Websitehttp://www.unisonic.com.tw/
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10N30_15 Overview

N-CHANNEL POWER MOSFET

UNISONIC TECHNOLOGIES CO., LTD
10N30
Preliminary
Power MOSFET
10A, 300V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC
10N30
is an N-channel mode power MOSFET using
UTC’ s advanced technology to provide customers with planar stripe
and DMOS technology. This technology specializes in allowing a
minimum on-state resistance and superior switching performance. It
also can withstand high energy pulse in the avalanche and
commutation mode.
The UTC
10N30
is universally applied in electronic lamp ballast
based on half bridge topology and high efficient switched mode
power supply.
FEATURES
* High switching speed
* R
DS(ON)
=0.65Ω @ V
GS
=10V
* 100% avalanche tested
SYMBOL
2.Drain
1.Gate
3.Source
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
10N30L-TA3-T
10N30G-TA3-T
10N30L-TM3-T
10N30G-TM3-T
10N30L-TN3-T
10N30G-TN3-T
10N30L-TN3-R
10N30G-TN3-R
Note: Pin Assignment: G: Gate D: Drain
S: Source
Package
TO-220
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
Packing
Tube
Tube
Tube
Tape Reel
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 4
QW-R502-738-b

10N30_15 Related Products

10N30_15 10N30G-TM3-T 10N30G-TN3-R 10N30G-TN3-T 10N30L-TN3-R 10N30L-TN3-T 10N30G-TA3-T 10N30L-TA3-T 10N30L-TM3-T
Description N-CHANNEL POWER MOSFET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET 10A, 300V N-CHANNEL POWER MOSFET N-CHANNEL POWER MOSFET Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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