PMEG3015EV
30 V, 1.5 A ultra low V
F
MEGA Schottky barrier rectifier in
SOT666 package
Rev. 02 — 4 February 2010
Product data sheet
1. Product profile
1.1 General description
Planar Maximum Efficiency General Application (MEGA) Schottky barrier rectifier with an
integrated guard ring for stress protection, encapsulated in an ultra small SMD SOT666
plastic package.
1.2 Features
Forward current: 1.5 A
Reverse voltage: 30 V
Ultra low forward voltage
Ultra small SMD packages
1.3 Applications
Low voltage rectification
High efficiency DC-to-DC conversion
Voltage clamping
Inverse polarity protection
Low power consumption applications
1.4 Quick reference data
Table 1.
Symbol
I
F
V
R
V
F
[1]
Quick reference data
Parameter
forward current
reverse voltage
forward voltage
I
F
= 1.5 A
[1]
Conditions
T
sp
≤
55
°C
Min
-
-
-
Typ
-
-
480
Max
1.5
30
550
Unit
A
V
mV
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
NXP Semiconductors
PMEG3015EV
30 V, 1.5 A ultra low V
F
MEGA Schottky barrier rectifier
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
cathode
cathode
anode
anode
cathode
cathode
1
2
3
6
5
4
1, 2
5, 6
3, 4
sym038
Simplified outline
Symbol
3. Ordering information
Table 3.
Ordering information
Package
Name
PMEG3015EV
-
Description
plastic surface mounted package; 6 leads
Version
SOT666
Type number
4. Marking
Table 4.
Marking codes
Marking code
1A
Type number
PMEG3015EV
PMEG3015EV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 February 2010
2 of 10
NXP Semiconductors
PMEG3015EV
30 V, 1.5 A ultra low V
F
MEGA Schottky barrier rectifier
5. Limiting values
Table 5.
Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
R
I
F
I
FRM
I
FSM
P
tot
T
j
T
amb
T
stg
[1]
[2]
[3]
Conditions
T
sp
≤
55
°C
[1]
[1]
Min
-
-
-
-
-
-
-
−65
−65
Max
30
1.5
4.5
9.5
0.31
0.58
150
+150
+150
Unit
V
A
A
A
W
W
°C
°C
°C
reverse voltage
forward current
non-repetitive peak forward
current
total power dissipation
junction temperature
ambient temperature
storage temperature
For SOT666 only valid, if pins 3 and 4 are connected in parallel.
repetitive peak forward current t
p
≤
1 ms;
δ ≤
0.25
t
p
= 8 ms; square
wave
T
amb
≤
25
°C
[2]
[3]
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm
2
.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-a)
Thermal characteristics
Parameter
Conditions
[1][2]
[3]
[4]
Min
-
-
-
Typ
-
-
-
Max
405
215
80
Unit
K/W
K/W
K/W
thermal resistance from junction in free air
to ambient
R
th(j-sp)
[1]
thermal resistance from junction
to solder point
For Schottky barrier diodes thermal run-away has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses. Nomograms for determining the reverse
power losses P
R
and I
F(AV)
rating will be available on request.
Reflow soldering is the only recommended soldering method.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for cathode 1cm
2
.
[2]
[3]
[4]
PMEG3015EV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 February 2010
3 of 10
NXP Semiconductors
PMEG3015EV
30 V, 1.5 A ultra low V
F
MEGA Schottky barrier rectifier
7. Characteristics
Table 7.
Characteristics
T
amb
= 25
°
C unless otherwise specified.
Symbol
V
F
Parameter
forward voltage
Conditions
I
F
= 1 mA
I
F
= 10 mA
I
F
= 100 mA
I
F
= 500 mA
I
F
= 1 A
I
F
= 1.5 A
I
R
C
d
[1]
[1]
[1]
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
Typ
125
185
255
340
410
480
60
400
60
Max
160
220
290
380
480
550
150
1000
72
Unit
mV
mV
mV
mV
mV
mV
μA
μA
pF
reverse current
diode capacitance
Pulse test: t
p
≤
300
μs; δ ≤
0.02.
V
R
= 10 V
V
R
= 30 V
V
R
= 1 V; f = 1 MHz
PMEG3015EV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 February 2010
4 of 10
NXP Semiconductors
PMEG3015EV
30 V, 1.5 A ultra low V
F
MEGA Schottky barrier rectifier
10
4
I
F
(mA)
006aaa079
I
R
(mA)
10
3
(5)
006aaa075
10
2
10
(4)
(3)
10
3
10
2
(5)
(4)
(3)
(2)
(1)
1
(2)
10
−1
10
−2
(1)
10
10
−3
1
10
−4
10
−1
0
0.2
0.4
V
F
(V)
0.6
10
−5
0
4
8
12
16
20
24
28
32
V
R
(V)
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 85
°C
(4) T
amb
= 125
°C
(5) T
amb
= 150
°C
(1) T
amb
=
−40 °C
(2) T
amb
= 25
°C
(3) T
amb
= 85
°C
(4) T
amb
= 125
°C
(5) T
amb
= 150
°C
Fig 1.
Forward current as a function of forward
voltage; typical values
120
C
d
(pF)
80
Fig 2.
Reverse current as a function of reverse
voltage; typical values
006aaa076
40
0
0
10
20
V
R
(V)
30
T
amb
= 25
°C;
f = 1 MHz
Fig 3.
Diode capacitance as a function of reverse voltage; typical values
PMEG3015EV_2
© NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 02 — 4 February 2010
5 of 10
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