Diode,
| Parameter Name | Attribute value |
| Maker | Infineon |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| Maximum forward voltage (VF) | 0.34 V |
| Maximum operating temperature | 150 °C |
| Minimum operating temperature | -55 °C |
| Maximum power dissipation | 0.15 W |
| Maximum repetitive peak reverse voltage | 8 V |
| Maximum reverse current | 1.2 µA |
| Reverse test voltage | 1 V |
| surface mount | YES |
| BAT68-07WE6327 | BAT68-06WE6327 | BAT68-08SE6327 | BAT68E6327 | BAT68-06E6327 | BAT68-04E6327 | BAT68-04WE6327 | |
|---|---|---|---|---|---|---|---|
| Description | Diode, | Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon | Diode, | Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, | Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon | Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon, | Mixer Diode, Very High Frequency to Ultra High Frequency, Silicon |
| Reach Compliance Code | unknown | compliant | unknown | compliant | compliant | compliant | compliant |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| Maximum forward voltage (VF) | 0.34 V | 0.34 V | 0.34 V | 0.34 V | 0.34 V | 0.34 V | 0.34 V |
| Maximum operating temperature | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C | 150 °C |
| Maximum power dissipation | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W | 0.15 W |
| Maximum repetitive peak reverse voltage | 8 V | 8 V | 8 V | 8 V | 8 V | 8 V | 8 V |
| surface mount | YES | YES | YES | YES | YES | YES | YES |
| Maker | Infineon | Infineon | Infineon | - | Infineon | Infineon | Infineon |
| Is it Rohs certified? | - | conform to | conform to | conform to | conform to | conform to | conform to |
| package instruction | - | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| Configuration | - | COMMON ANODE, 2 ELEMENTS | - | SINGLE | COMMON ANODE, 2 ELEMENTS | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS |
| Maximum diode capacitance | - | 1 pF | - | 1 pF | 1 pF | 1 pF | 1 pF |
| Diode component materials | - | SILICON | - | SILICON | SILICON | SILICON | SILICON |
| Diode type | - | MIXER DIODE | - | MIXER DIODE | MIXER DIODE | MIXER DIODE | MIXER DIODE |
| frequency band | - | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | - | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY |
| JESD-30 code | - | R-PDSO-G3 | - | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 | R-PDSO-G3 |
| JESD-609 code | - | e3 | - | e3 | e3 | e3 | e3 |
| Humidity sensitivity level | - | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of components | - | 2 | - | 1 | 2 | 2 | 2 |
| Number of terminals | - | 3 | - | 3 | 3 | 3 | 3 |
| Package body material | - | PLASTIC/EPOXY | - | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | - | RECTANGULAR | - | RECTANGULAR | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | - | SMALL OUTLINE | - | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | - | 260 | - | 260 | 260 | 260 | 260 |
| Certification status | - | Not Qualified | - | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| technology | - | SCHOTTKY | - | SCHOTTKY | SCHOTTKY | SCHOTTKY | SCHOTTKY |
| Terminal surface | - | MATTE TIN | - | MATTE TIN | MATTE TIN | MATTE TIN | MATTE TIN |
| Terminal form | - | GULL WING | - | GULL WING | GULL WING | GULL WING | GULL WING |
| Terminal location | - | DUAL | - | DUAL | DUAL | DUAL | DUAL |
| Maximum time at peak reflow temperature | - | 40 | - | 40 | 40 | 40 | 40 |
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