8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Rochester Electronics |
| Reach Compliance Code | unknown |
| Other features | MEGAFET, LOGIC LEVEL COMPATIBLE |
| Shell connection | DRAIN |
| Configuration | SINGLE WITH BUILT-IN DIODE |
| Minimum drain-source breakdown voltage | 60 V |
| Maximum drain current (ID) | 8 A |
| Maximum drain-source on-resistance | 0.33 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB |
| JESD-30 code | R-PSFM-T3 |
| JESD-609 code | e0 |
| Humidity sensitivity level | NOT SPECIFIED |
| Number of components | 1 |
| Number of terminals | 3 |
| Operating mode | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY |
| Package shape | RECTANGULAR |
| Package form | FLANGE MOUNT |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL |
| Certification status | COMMERCIAL |
| surface mount | NO |
| Terminal surface | TIN LEAD |
| Terminal form | THROUGH-HOLE |
| Terminal location | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| transistor applications | SWITCHING |
| Transistor component materials | SILICON |
| RFP8P06LE | RFD8P06LE | RFD8P06LESM | |
|---|---|---|---|
| Description | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-251AA | 8A, 60V, 0.33ohm, P-CHANNEL, Si, POWER, MOSFET, TO-252AA |
| Is it lead-free? | Contains lead | Contains lead | Contains lead |
| Is it Rohs certified? | incompatible | incompatible | incompatible |
| Maker | Rochester Electronics | Rochester Electronics | Rochester Electronics |
| Reach Compliance Code | unknown | unknown | unknown |
| Other features | MEGAFET, LOGIC LEVEL COMPATIBLE | MEGAFET, LOGIC LEVEL COMPATIBLE | LOGIC LEVEL COMPATIBLE |
| Configuration | SINGLE WITH BUILT-IN DIODE | SINGLE WITH BUILT-IN DIODE | SINGLE |
| Minimum drain-source breakdown voltage | 60 V | 60 V | 60 V |
| Maximum drain current (ID) | 8 A | 8 A | 8 A |
| Maximum drain-source on-resistance | 0.33 Ω | 0.33 Ω | 0.33 Ω |
| FET technology | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR | METAL-OXIDE SEMICONDUCTOR |
| JEDEC-95 code | TO-220AB | TO-251AA | TO-252AA |
| JESD-30 code | R-PSFM-T3 | R-PSIP-T3 | R-PSSO-G2 |
| JESD-609 code | e0 | e0 | e0 |
| Number of components | 1 | 1 | 1 |
| Number of terminals | 3 | 3 | 2 |
| Operating mode | ENHANCEMENT MODE | ENHANCEMENT MODE | ENHANCEMENT MODE |
| Package body material | PLASTIC/EPOXY | PLASTIC/EPOXY | PLASTIC/EPOXY |
| Package shape | RECTANGULAR | RECTANGULAR | RECTANGULAR |
| Package form | FLANGE MOUNT | IN-LINE | SMALL OUTLINE |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Polarity/channel type | P-CHANNEL | P-CHANNEL | P-CHANNEL |
| Certification status | COMMERCIAL | COMMERCIAL | COMMERCIAL |
| surface mount | NO | NO | YES |
| Terminal surface | TIN LEAD | TIN LEAD | TIN LEAD |
| Terminal form | THROUGH-HOLE | THROUGH-HOLE | GULL WING |
| Terminal location | SINGLE | SINGLE | SINGLE |
| Maximum time at peak reflow temperature | NOT SPECIFIED | NOT SPECIFIED | NOT SPECIFIED |
| Transistor component materials | SILICON | SILICON | SILICON |
| Shell connection | DRAIN | DRAIN | - |
| Humidity sensitivity level | NOT SPECIFIED | NOT SPECIFIED | - |
| transistor applications | SWITCHING | SWITCHING | - |
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