RF1S40N10SM datasheet, PDF - EEWORLD Datasheet

RF1S40N10SM: DescriptionPower Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB; CategoryDiscrete semiconductor The transistor; File Size204KB，8 Pages; ManufacturerHarris; Websitehttp://www.harris.com/

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RF1S40N10SM Overview

Power Field-Effect Transistor, 40A I(D), 100V, 0.04ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Harris
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	100 V
Maximum drain current (Abs) (ID)	40 A
Maximum drain current (ID)	40 A
Maximum drain-source on-resistance	0.04 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-263AB
JESD-30 code	R-PSSO-G2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	175 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	160 W
Maximum pulsed drain current (IDM)	100 A
Certification status	Not Qualified
surface mount	YES
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal location	SINGLE
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON

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