UNISONIC TECHNOLOGIES CO., LTD
11NM40
Preliminary
Power MOSFET
11A, 400V N-CHANNEL
SUPER-JUNCTION MOSFET
DESCRIPTION
The UTC
11NM40
is an Super Junction MOSFET Structure . It
uses UTC advanced planar stripe, DMOS technology to provide
customers perfect switching performance, minimal on-state
resistance.
The UTC
11NM40
is universally applied in electronic lamp
ballasts based on half bridge topology, high efficiency switched
mode power supplies, active power factor correction, etc.
FEATURES
* R
DS(ON)
< 0.38Ω @ V
GS
=10V, I
D
=5.7A
* High switching speed
* Low effective output capacitance (Typ.=95pF)
* Low gate charge (Typ.=40nC)
SYMBOL
ORDERING INFORMATION
Package
TO-220F
Pin Assignment
1
2
3
G
D
S
Packing
Tube
Ordering Number
Lead Free
Halogen Free
11NM40L-TF3-T
11NM40G-TF3-T
Note: Pin Assignment: G: Gate D: Drain
S: Source
MARKING
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QW-R502-A38.b
11NM40
PARAMETER
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Preliminary
Power MOSFET
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C unless otherwise noted)
SYMBOL
V
DSS
V
GSS
I
D
I
DM
I
AR
E
AS
E
AR
dv/dt
RATINGS
400
±30
11.6
7
33
11
154
12.5
4.5
125
1.0
-55~+150
-55~+150
UNIT
V
V
A
A
A
A
mJ
mJ
V/ns
W
W/°C
°C
°C
T
C
=25°C
T
C
=100°C
Pulsed (Note 1)
Continuous
Avalanche Current (Note 1)
Single Pulsed Avalanche Energy (Note 2)
Repetitive Avalanche Energy (Note 1)
Peak Diode Recovery dv/dt (Note 3)
T
C
=25°C
Total Power Dissipation
P
D
Derate above 25°C
Operating Temperature Range
T
J
Storage Temperature Range
T
STG
Maximum Lead Temperature for Soldering Purposes,
T
L
300
°C
1/8" from Case for 5 Seconds
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by maximum junction temperature.
3. L = 2.3mH, I
AS
= 11.6A, V
DD
= 50V, R
G
= 25
Ω,
Starting T
J
= 25°C
4. I
SD
≤
11.6A, di/dt
≤200A/μs,
V
DD
≤
BV
DSS
, Starting T
J
= 25°C
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
θ
JA
θ
JC
RATINGS
62.5
1.0
UNIT
°C/W
°C/W
Junction to Ambient
Junction to Case
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QW-R502-A38.b
11NM40
PARAMETER
OFF CHARACTERISTICS
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Drain-Source Avalanche Breakdown
Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage Current
Forward
Reverse
Preliminary
Power MOSFET
ELECTRICAL CHARACTERISTICS
(T
C
=25°C unless otherwise noted)
SYMBOL
BV
DSS
∆BV
DSS
/∆T
J
BV
DS
I
DSS
I
GSS
TEST CONDITIONS
V
GS
=0V, I
D
=250µA, T
J
=25°C
I
D
=250µA, Referenced to 25°C
V
GS
=0V, I
D
=11A
V
DS
=400V, V
GS
=0V
V
DS
=320V, T
C
=125°C
V
GS
=+30V, V
DS
=0V
V
GS
=-30V, V
DS
=0V
3.0
MIN TYP MAX UNIT
400
0.6
700
1
10
+100
-100
5.0
0.32 0.38
1148 1490
671 870
63
82
35
95
40
7.2
21
55
115
330
140
52
V
V/°C
V
µA
µA
nA
nA
V
Ω
pF
pF
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
A
A
V
ns
µC
ON CHARACTERISTICS
Gate Threshold Voltage
V
GS(TH)
V
DS
=V
GS
, I
D
=250µA
Static Drain-Source On-State Resistance
R
DS(ON)
V
DS
=10V, I
D
=5.7A
DYNAMIC PARAMETERS
Input Capacitance
C
ISS
V
GS
=0V, V
DS
=25V, f=1.0MHz
Output Capacitance
C
OSS
Reverse Transfer Capacitance
C
RSS
Output Capacitance
C
OSS
V
GS
=0V, V
DS
=320V, f=1.0MHz
Effective Output Capacitance
C
OSS
eff
V
DS
=0V~320V, V
GS
=0V
SWITCHING PARAMETERS
Total Gate Charge
Q
G
V
GS
=10V, V
DS
=320V, I
D
=11A
Gate to Source Charge
Q
GS
(Note 4, 5)
Gate to Drain Charge
Q
GD
Turn-ON Delay Time
t
D(ON)
Rise Time
t
R
V
DD
=200V, I
D
=11A, R
G
=25Ω
(Note 4, 5)
Turn-OFF Delay Time
t
D(OFF)
Fall-Time
t
F
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Maximum Continuous Drain-Source Diode
I
S
Forward Current
Maximum Pulsed Drain-Source Diode
I
SM
Forward Current
Drain-Source Diode Forward Voltage
V
SD
I
S
=11.6A, V
GS
=0V
Body Diode Reverse Recovery Time
t
RR
I
S
=11.6A, V
GS
=0V,
dI
F
/dt=100A/µs (Note 4)
Body Diode Reverse Recovery Charge
Q
RR
Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature.
2. I
AS
=5.5A, V
DD
=50V, R
G
=25Ω, Starting T
J
=25°C.
3. I
SD
≤11A,
di/dt≤200A/µs, V
DD
≤BV
DSS
, Starting T
J
=25°C.
4. Pulse Test : Pulse width≤300µs, Duty cycle≤2%.
5. Essentially independent of operating temperature.
80
205
400
180
11.6
33
1.4
390
5.7
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www.unisonic.com.tw
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QW-R502-A38.b
11NM40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS
V
DS
R
G
R
D
90%
V
GS
10V
V
DS
10%
DUT
V
GS
t
d(ON)
t
ON
t
R
t
d(OFF)
t
F
t
OFF
Resistive Switching Test Circuit
Resistive Switching Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A38.b
11NM40
Preliminary
Power MOSFET
TEST CIRCUITS AND WAVEFORMS(Cont.)
DUT
R
G
+
V
DS
L
-
I
SD
V
GS
V
DD
Driver
Same Type
as DUT
dv/dt controlled by R
G
I
SD
controlled by pulse period
V
GS
(Driver)
D=
Gate Pulse Width
Gate Pulse Period
10V
I
FM
, Body Diode Forward Current
I
SD
(DUT)
I
RM
Body Diode Reverse Current
V
DS
(DUT)
di/dt
Body Diode Recovery dv/dt
V
SD
V
DD
Body Diode Forward
Voltage Drop
Peak Diode Recovery dv/dt Test Circuit and Waveforms
UNISONIC TECHNOLOGIES CO., LTD
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QW-R502-A38.b
51mcu
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