TRENCHSTOP™ Series
IKB20N60T
p
Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft,
fast recovery anti-parallel Emitter Controlled HE diode
Features:
Very low V
CE(sat)
1.5V (typ.)
Maximum Junction Temperature 175°C
Short circuit withstand time 5s
Designed for frequency inverters for washing machines, fans, pumps and vacuum
cleaners
TRENCHSTOP™ and Fieldstop technology for 600V applications offers :
- very tight parameter distribution
- high ruggedness, temperature stable behavior
- very high switching speed
Positive temperature coefficient in V
CE(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC
1
for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models :
http://www.infineon.com/igbt/
C
G
E
PG-TO263-3
Type
IKB20N60T
V
CE
600V
I
C
20A
V
CE(sat),Tj=25°C
1.5V
T
j,max
175C
Marking
K20T60
Package
PG-TO263-3
Maximum Ratings
Parameter
Collector-emitter voltage,
T
j
≥ 25C
DC collector current, limited by
T
jmax
T
C
= 25C
T
C
= 100C
Pulsed collector current,
t
p
limited by
T
jmax
Turn off safe operating area,
V
CE
= 600V,
T
j
= 175C,
t
p
= 1µs
Diode forward current, limited by
T
jmax
Diode pulsed current,
t
p
limited by
T
jmax
Gate-emitter voltage
Short circuit withstand time
2)
Symbol
V
CE
I
C
I
Cpul s
-
I
F
I
Fpul s
V
GE
t
SC
P
tot
T
j
T
stg
-
Value
600
40
20
60
60
40
20
60
20
5
166
-40...+175
-55...+150
260
Unit
V
A
T
C
= 25C
T
C
= 100C
V
s
W
C
V
GE
= 15V,
V
CC
400V,
T
j
150C
Power dissipation
T
C
= 25C
Operating junction temperature
Storage temperature
Soldering temperature (reflow soldering, MSL1)
1
2)
J-STD-020 and JESD-022
Allowed number of short circuits: <1000; time between short circuits: >1s.
1
Rev. 2.6 20.09.2013
IFAG IPC TD VLS
TRENCHSTOP™ Series
Thermal Resistance
Parameter
Characteristic
IGBT thermal resistance,
junction – case
Diode thermal resistance,
junction – case
Thermal resistance,
junction – ambient
Electrical Characteristic,
at
T
j
= 25
C,
unless otherwise specified
Parameter
Static Characteristic
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
V
( B R ) C E S
V
G E
= 0V ,
I
C
= 0 .2m A
V
CE(sat)
V
G E
= 15 V ,
I
C
= 20 A
T
j
=2 5
C
T
j
=1 7 5 C
Diode forward voltage
V
F
V
G E
= 0V ,
I
F
= 2 0 A
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter threshold voltage
Zero gate voltage collector current
V
GE(th)
I
CES
I
C
= 29 0µ A ,
V
C E
=
V
G E
V
C E
= 60 0 V
,
V
G E
= 0V
T
j
=2 5
C
T
j
=1 7 5 C
Gate-emitter leakage current
Transconductance
Integrated gate resistor
Dynamic Characteristic
Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge
C
iss
C
oss
C
rss
Q
Gate
V
C E
= 25 V ,
V
G E
= 0V ,
f=
1 MH z
V
C C
= 48 0 V,
I
C
=2 0 A
V
G E
= 15 V
-
-
-
-
-
V
G E
= 15 V ,t
S C
5
s
V
C C
= 4 0 0 V,
T
j
150C
-
I
GES
g
fs
R
Gint
V
C E
= 0V ,
V
G E
=2 0 V
V
C E
= 20 V ,
I
C
= 20 A
-
-
-
-
-
-
4.1
-
-
600
Symbol
Conditions
R
thJA
6cm² Cu
R
thJCD
R
thJC
Symbol
Conditions
IKB20N60T
p
Max. Value
Unit
0.9
1.5
40
K/W
Value
min.
Typ.
-
1.5
1.9
1.65
1.6
4.9
max.
-
2.05
-
2.05
-
5.7
Unit
V
µA
-
-
-
11
-
40
1500
100
-
nA
S
Ω
1100
71
32
120
7
183.3
-
-
-
-
-
-
pF
nC
nH
A
L
E
Internal emitter inductance
measured 5mm (0.197 in.) from case
Short circuit collector current
1)
I
C(SC)
1)
Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
2
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
Switching Characteristic, Inductive Load,
at
T
j
=25
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=2 5
C
,
V
R
= 4 00 V ,
I
F
= 2 0 A,
d i
F
/ d t
=8 8 0 A/
s
-
-
-
-
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T
j
=25
C,
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
r
G
=12
,
L
=131nH,
C
=31pF
IKB20N60T
p
Value
Unit
Symbol
Conditions
min.
-
-
-
-
-
-
-
Typ.
18
14
199
42
0.31
0.46
0.77
41
0.31
13.3
711
max.
-
-
-
-
-
-
-
-
-
-
-
ns
mJ
ns
µC
A
A/s
Switching Characteristic, Inductive Load,
at
T
j
=175
C
Parameter
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Anti-Parallel Diode Characteristic
Diode reverse recovery time
Diode reverse recovery charge
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
b
t
rr
Q
rr
I
rrm
d i
r r
/d t
T
j
=1 7 5 C
V
R
= 4 00 V ,
I
F
= 2 0 A,
d i
F
/ d t
=8 8 0 A/
s
-
-
-
-
176
1.46
18.9
467
-
-
-
-
ns
µC
A
A/s
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
L
,
C
f rom Fig. E
Energy losses include
“tail” and diode reverse
recovery.
T
j
=175
C,
V
CC
=400V,
I
C
=20A,
V
GE
=0/15V,
r
G
=12
,
L
=131nH,
C
=31pF
Symbol
Conditions
Value
min.
-
-
-
-
-
-
-
Typ.
18
18
223
76
0.51
0.64
1.15
max.
-
-
-
-
-
-
-
Unit
ns
mJ
IFAG IPC TD VLS
3
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
IKB20N60T
p
t
p
=2µs
10µs
60A
50A
40A
30A
20A
10A
0A
10H z
T
C
=80°C
T
C
=110°C
I
C
,
COLLECTOR CURRENT
I
C
,
COLLECTOR CURRENT
10A
50µs
1A
I
c
I
c
100H z
1kHz
10kHz
100kHz
1ms
DC
10ms
0.1A
1V
10V
100V
1000V
f,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(T
j
175C,
D =
0.5,
V
CE
= 400V,
V
GE
= 0/15V,
r
G
= 12)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(D
=
0,
T
C
= 25C,
T
j
175C;
V
GE
=0/15V)
160W
140W
30A
P
tot
,
POWER DISSIPATION
I
C
,
COLLECTOR CURRENT
120W
100W
80W
60W
40W
20W
0W
25°C
25A
20A
15A
10A
5A
0A
25°C
50°C
75°C
100°C 125°C 150°C
75°C
125°C
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function of
case temperature
(T
j
175C)
T
C
,
CASE TEMPERATURE
Figure 4. Collector current as a function of
case temperature
(V
GE
15V,
T
j
175C)
IFAG IPC TD VLS
4
Rev. 2.6 20.09.2013
TRENCHSTOP™ Series
IKB20N60T
p
50A
50A
I
C
,
COLLECTOR CURRENT
40A
I
C
,
COLLECTOR CURRENT
V
G E
=20V
15V
13V
30A
11V
9V
20A
7V
V
GE
=20V
40A
15V
13V
30A
11V
9V
20A
7V
10A
10A
0A
0V
1V
2V
3V
0A
0V
1V
2V
3V
4V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristic
(T
j
= 25°C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristic
(T
j
= 175°C)
35A
30A
25A
20A
15A
10A
5A
0A
0V
2V
4V
6V
8V
V
CE(sat),
COLLECTOR
-
EMITT SATURATION VOLTAGE
2.5V
I
C
=40A
I
C
,
COLLECTOR CURRENT
2.0V
1.5V
I
C
=20A
I
C
=10A
1.0V
T
J
= 1 7 5 °C
2 5 °C
0.5V
0.0V
0°C
50°C
100°C
150°C
V
GE
,
GATE-EMITTER VOLTAGE
Figure 7. Typical transfer characteristic
(V
CE
=10V)
T
J
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of
junction temperature
(V
GE
= 15V)
IFAG IPC TD VLS
5
Rev. 2.6 20.09.2013
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