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BF960

Description
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,
CategoryDiscrete semiconductor    The transistor   
File Size80KB,2 Pages
ManufacturerSIEMENS
Websitehttp://www.infineon.com/
Download Datasheet Parametric View All

BF960 Overview

Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET,

BF960 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerSIEMENS
package instruction,
Reach Compliance Codeunknown
ConfigurationSingle
Maximum drain current (Abs) (ID)0.02 A
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-609 codee0
Maximum operating temperature150 °C
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.225 W
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
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