Data Sheet
Schottky Barrier Diode
RBQ30T45A
lApplications
General rectification
lDimensions
(Unit : mm)
4.5±0.3
0.1
10.0±0.3
0.1
2.8±0.2
0.1
lStructure
①
1.3
0.8
(1) (2) (3)
13.5MIN
lConstruction
Silicon epitaxial planer
1.2
5.0±0.2
8.0±0.2
12.0±0.2
15.0±0.4
0.2
8.0
0.7±0.1
0.05
lFeatures
1)Cathode common type.
2)Low I
R
3)High reliability
2.6±0.5
ROHM : TO220FN
①
Manufacture Date
lAbsolute
maximum ratings
(Tc=25C)
Parameter
Symbol
V
RM
Reverse voltage (repetitive)
Reverse voltage (DC)
V
R
Average rectified forward current (*1)
Io
I
FSM
Forward current surge peak (60Hz・1cyc)
Junction temperature
Tj
Storage temperature
(*1) Rating of per diode : Io/2
Tstg
Limits
45
45
30
100
150
-40
to
+150
Unit
V
V
A
A
°C
°C
lElectrical
characteristics
(Tj=25°C)
Parameter
Forward voltage
Reverse current
Symbol
V
F
I
R
Min.
-
-
Typ.
-
-
Max.
0.65
450
Unit
V
mA
I
F
=15A
V
R
=45V
Conditions
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1/4
2011.11 - Rev.A
RBQ30T45A
Data Sheet
100
100000
Ta=150°C
10000
REVERSE CURRENT:I
R
(μA)
FORWARD CURRENT:I
F
(A)
10
Ta=125°C
Ta=150°C
1000
Ta=125°C
100
Ta=75°C
10
1
1
Ta=75°C
Ta=25°C
0.1
Ta=-25°C
Ta=25°C
0.1
Ta=-25°C
0.01
0
100
200
300
400
500
600
700
800
0.01
0
10
20
30
40
50
FORWARD VOLTAGE：V
F
(mV)
V
F
-I
F
CHARACTERISTICS
REVERSE VOLTAGE：V
R
(V)
V
R
-I
R
CHARACTERISTICS
10000
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
f=1MHz
1000
FORWARD VOLTAGE:V
F
(mV)
600
590
580
570
560
550
540
530
520
510
AVE:564.4mV
Ta=25°C
I
F
=15A
n=30pcs
100
10
1
0
5
10
15
20
25
30
REVERSE VOLTAGE:V
R
(V)
V
R
-Ct CHARACTERISTICS
500
V
F
DISPERSION
MAP
100
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
90
80
REVERSE CURRENT:I
R
(mA)
70
60
50
40
30
20
10
0
I
R
DISPERSION MAP
AVE:36.6mA
Ta=25°C
V
R
=45V
n=30pcs
1600
1590
1580
AVE:1562.4pF
1570
1560
1550
1540
1530
1520
1510
1500
Ct DISPERSION MAP
Ta=25°C
f=1MHz
V
R
=0V
n=10pcs
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© 2011 ROHM Co., Ltd. All rights reserved.
2/4
2011.11 - Rev.A
RBQ30T45A
Data Sheet
500
30
Ta=25°C
I
F
=0.5A
I
R
=1A
Irr=0.25*I
R
n=10pcs
PEAK SURGE
FORWARD CURRENT:I
FSM(
A)
400
I
FSM
8.3ms
1cyc
REVERSE RECOVERY TIME:trr(ns)
25
AVE:19.2ns
20
300
AVE265A
15
200
10
100
5
0
I
FSM
DISRESION MAP
0
trr DISPERSION MAP
500
450
I
FSM
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
PEAK SURGE
FORWARD CURRENT:I
FSM
(A)
400
8.3ms
350
300
250
200
150
100
50
0
1
10
NUMBER OF CYCLES
I
FSM
-CYCLE CHARACTERISTICS
100
1cyc
8.3ms
500
450
400
350
300
250
200
150
100
50
0
1
10
TIME:t(ms)
I
FSM
-t CHARACTERISTICS
100
I
FSM
t
1000
35
TRANSIENT
THERMAL IMPEDANCE:Rth (°C/W)
30
100
Rth(j-a)
10
FORWARD POWER
DISSIPATION:Pf(W)
25
D=1/2
Sin(q＝180)
20
15
1
Rth(j-c)
10
0.1
5
0.01
0.001
0
0.01
0.1
1
10
100
1000
0
10
20
30
DC
40
50
TIME:t(s)
Rth-t CHARACTERISTICS
AVERAGE RECTIFIED
FORWARD CURRENT：Io(A)
Io-Pf CHARACTERISTICS
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3/4
2011.11 - Rev.A
RBQ30T45A
Data Sheet
6
60
0A
Io
t
T
DC
D=1/2
30
V
R
D=t/T
V
R
=20V
Tj=150°C
0V
5
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
50
REVERSE POWER
DISSIPATION:P
R
(W)
4
40
3
DC
Sin(θ＝180)
1
D=1/2
2
20
10
Sin(q＝180)
0
0
10
20
30
40
50
0
0
25
50
75
100
125
150
REVERSE VOLTAGE:V
R
(V)
V
R
-P
R
CHARACTERISTICS
AMBIENT TEMPERATURE:Ta(°C)
DERATING CURVE(Io-Ta)
80
Io
70
AVERAGE RECTIFIED
FORWARD CURRENT:Io(A)
60
DC
50
40
30
20
Sin(q＝180)
10
0
0
25
50
75
100
125
150
D=1/2
T
0A
0V
t
30
No break at 30kV
ELECTROSTATIC
DISCHARGE TEST ESD(KV)
V
R
D=t/T
V
R
=20V
Tj=150°C
25
20
15
AVE:16.2kV
10
5
0
C=200pF
R=0W
C=100pF
R=1.5kW
CASE TEMPERATURE:Tc(°C)
DERATING CURVE(Io-Tc)
ESD DISPERSION MAP
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© 2011 ROHM Co., Ltd. All rights reserved.
4/4
2011.11 - Rev.A
Notice
Notes
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