DDR DRAM, 128MX4, 0.45ns, CMOS, PBGA60, 8 X 10 MM, FBGA-60
| Parameter Name | Attribute value |
| Is it lead-free? | Contains lead |
| Is it Rohs certified? | incompatible |
| Maker | Micron Technology |
| Parts packaging code | BGA |
| package instruction | TFBGA, |
| Contacts | 60 |
| Reach Compliance Code | compliant |
| ECCN code | EAR99 |
| access mode | FOUR BANK PAGE BURST |
| Maximum access time | 0.45 ns |
| Other features | AUTO/SELF REFRESH |
| JESD-30 code | R-PBGA-B60 |
| JESD-609 code | e0 |
| length | 10 mm |
| memory density | 536870912 bit |
| Memory IC Type | DDR DRAM |
| memory width | 4 |
| Number of functions | 1 |
| Number of ports | 1 |
| Number of terminals | 60 |
| word count | 134217728 words |
| character code | 128000000 |
| Operating mode | SYNCHRONOUS |
| Maximum operating temperature | 85 °C |
| Minimum operating temperature | -40 °C |
| organize | 128MX4 |
| Package body material | PLASTIC/EPOXY |
| encapsulated code | TFBGA |
| Package shape | RECTANGULAR |
| Package form | GRID ARRAY, THIN PROFILE, FINE PITCH |
| Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
| Certification status | Not Qualified |
| Maximum seat height | 1.2 mm |
| self refresh | YES |
| Maximum supply voltage (Vsup) | 1.9 V |
| Minimum supply voltage (Vsup) | 1.7 V |
| Nominal supply voltage (Vsup) | 1.8 V |
| surface mount | YES |
| technology | CMOS |
| Temperature level | INDUSTRIAL |
| Terminal surface | Tin/Lead/Silver (Sn/Pb/Ag) |
| Terminal form | BALL |
| Terminal pitch | 0.8 mm |
| Terminal location | BOTTOM |
| Maximum time at peak reflow temperature | NOT SPECIFIED |
| width | 8 mm |
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