UT8Q512C-25TBDCX datasheet, PDF

UT8Q512C-25TBDCX: DescriptionStandard SRAM, 512KX8, 25ns, CMOS, CDFP36, BOTTOM BRAZED, CERAMIC, FP-36; Categorystorage storage; File Size318KB，14 Pages; ManufacturerCobham Semiconductor Solutions

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UT8Q512C-25TBDCX Overview

Standard SRAM, 512KX8, 25ns, CMOS, CDFP36, BOTTOM BRAZED, CERAMIC, FP-36

Parameter Name	Attribute value
Maker	Cobham Semiconductor Solutions
Parts packaging code	DFP
package instruction	DFP,
Contacts	36
Reach Compliance Code	unknown
ECCN code	3A001.A.2.C
Maximum access time	25 ns
JESD-30 code	R-CDFP-F36
memory density	4194304 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	36
word count	524288 words
character code	512000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	512KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DFP
Package shape	RECTANGULAR
Package form	FLATPACK
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	3.048 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	3 V
surface mount	YES
technology	CMOS
Temperature level	MILITARY
Terminal form	FLAT
Terminal pitch	1.27 mm
Terminal location	DUAL
width	12.192 mm

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