Wide Band Low Power Amplifier, 1600MHz Max, T06, 6 PIN
UPC2726T-E3 Parametric
Parameter Name
Attribute value
Maker
California Eastern Labs
Reach Compliance Code
unknown
Other features
HIGH RELIABILITY
Characteristic impedance
50 Ω
structure
COMPONENT
Gain
11 dB
Maximum input power (CW)
Maximum operating frequency
1600 MHz
Maximum operating temperature
85 °C
Minimum operating temperature
-40 °C
RF/Microwave Device Types
WIDE BAND LOW POWER
UPC2726T-E3 Preview
1.6 GHz DIFFERENTIAL
WIDEBAND SILICON
RFIC AMPLIFIER
FEATURES
• HIGH GAIN:
15 dB Typical at 400 MHz
• WIDEBAND FREQUENCY RESPONSE:
1.6 GHz TYP
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
Power Gain, G
P
(dB)
20
G
P
UPC2726T
NOISE FIGURE AND GAIN
vs. FREQUENCY AND VOLTAGE
2.0 V
0
9
7
5
3
1
DESCRIPTION
The UPC2726T is a Silicon RF Integrated Citrcuit which is
manufactured using the NESAT III process. The NESAT III
process produces transistors with f
T
approaching 20 GHz.
This amplifier was designed as a buffer amplifier for circuits
requiring differential inputs and outputs for increased common-
mode rejection.
NEC's stringent quality assurance and test procedures ensure
the highest reliability and performance.
NF
V
CC
= 2.0 V
V
CC
= 4.5--5.5 V
NT
IN
0.1
20
0.3
1.0
2.0
3.0
Frequency, f (GHz)
GAIN vs. FREQUENCY
AND TEMPERATURE
-40°C
Power Gain, G
P
(dB)
15
25°C
10
85°C
CO
V
CC
= 5.0 V
5
0.1
0.3
1.0
2.0
3.0
Frequency, f (GHz)
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C, Z
L
= Z
S
= 50
Ω,
f = 400 MHz)
PART NUMBER
PACKAGE OUTLINE
UPC2726T
V
CC
= 5 V
TYP
11.5
15
4.5
1.0
-5
1.6
-2
2
4
60
-2.5
V
CC
= 2 V
TYP
2.5
4.5
5.1
2.4
-14
1
4
58
-10
DI
S
SYMBOLS
I
CC
G
S
fu
PARAMETERS AND CONDITIONS
UNITS
mA
dB
dB
GHz
dBm
dB
dB
dB
dBm
MIN
8
11
MAX
15
17
6
MIN
MAX
Circuit Current, (No Signal)
Small Signal Gain
Noise Figure
NF
Upper limit Operating Frequency
1
P
SAT
RL
IN
Saturated Output Power
Input Return Loss
Output Return Loss
RL
OUT
ISOL
OIP
3
Isolation
Output 3rd Order Intercept Point
2
Notes:
1. The Gain at fu is 3 dB down from the gain at 400 MHz.
2. f
1
= 400 MHz, f
2
= 402 MHz, single side band.
California Eastern Laboratories
Noise Figure, NF (dB)
• SINGLE POSITIVE DC SUPPLY
UE
10
D
V
CC
= 5.0 V
3.0 V
UPC2726T
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CC
P
IN
P
T
T
OP
T
STG
PARAMETERS
Supply Voltage
Input Power
Total Power Dissipation
2
Operating Temperature
Storage Temperature
UNITS
V
dBm
mW
°C
°C
RATINGS
6.0
0
280
-40 to +85
-55 to +150
RECOMMENDED
OPERATING CONDITIONS
SYMBOLS
V
CC
T
OP
PARAMETERS
Supply Voltage
Operating Temperature
UNITS
V
°C
MIN
4.5
-40
TYP MAX
5.0
25
5.5
85
Notes:
1. Operation in excess of any one of these parameters may result in
permanent damage.
2. Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB (T
A
= +85°C).
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
CIRCUIT CURRENT vs.
VOLTAGE
20
18
No input signals
NT
IN
16
14
12
10
8
6
4
2
0
-40
-20
0
Circuit Current, I
CC
(mA)
14
12
10
8
6
4
2
0
0
CO
1
2
3
4
5
6
Circuit Current, I
CC
(mA)
16
Supply Voltage, V
CC
(V)
RETURN LOSS vs. FREQUENCY
RL
IN
RL
IN
DI
S
0
RL
OUT
RL
OUT
-10
Conversion Gain (dB)
Return Loss, RL (dB)
-20
-30
-40
I
SOL
-50
-60
1
0.3
1.0
2.0
Frequency, f (MHz)
UE
CIRCUIT CURRENT vs.
OPERATING TEMPERATURE
V
CC
= 5.0 V
20
40
60
80
100
Operating Temperature, T
OP
(°C)
OUTPUT POWER vs.
INPUT POWER and VOLTAGE
10
f = 400 MHz
0
V
CC
= 5.5 V
V
CC
= 5.0 V
-10
-20
-30
-40
-50
-40
Input Power, P
IN
(dBm)
D
V
CC
= 4.5 V
V
CC
= 2.0 V
-30
-20
-10
0
UPC2726T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
SATURATED OUTPUT POWER vs.
FREQUENCY and VOLTAGE
0
OUTPUT POWER vs.
INPUT POWER and TEMPERATURE
10
V
CC
= 5.0 V
f = 400 MHz
T
A
= +25°C
Saturated Output Power, P
OUT
(dBm)
-2
Output Power,P
OUT
(dBm)
-4
-6
-8
-10
-12
-14
-16
-18
-20
0.1
V
CC
= 5.5 V
V
CC
= 5.0 V
V
CC
= 4.5 V
0
T
A
= +85°C
-10
V
CC
= 2.0 V
0.2
0.5
1
2
3
Frequency, f (MHz)
S PARAMETERS
NT
IN
100 M
400 M
1G
CO
S
11
PACKAGE OUTLINE T06
+0.2
2.8 -0.3
+0.2
1.5 -0.1
Start: 100 MHz
Stop: 2 Ghz
Conditions: T
A
= 25°C, V
CC
= 5 V
OUTLINE DIMENSIONS
(Units in mm)
LEAD CONNECTIONS
(Top View)
(Bottom View)
DI
S
UE
-20
-30
-40
-50
-40
-30
-20
-10
Input Power, P
IN
(dBm)
3
C1P
2
4
2.9±0.2
3
0.95
1
5
1.9±0.2 2
0.95
1
6
-0.05
0.3 +0.10
+0.2
1.1 -0.1
0.8
0.13±0.1
1. INPUT
2. GND
3. OUTPUT
4. OUTPUT
5. V
CC
6. INPUT
0 to 0.1
Note:
All dimensions are typical unless otherwise specified.
D
T
A
= -40°C
0
100 M
400 M
1G
S
22
4
4
3
5
5
2
6
6
1
UPC2726T
TEST CIRCUIT
V
CC
1000 pF
3
RECOMMENDED P.C.B. LAYOUT
(Units in mm)
3.10
4
0.95
50
Ω
IN
1000 pF
IN
1000 pF
5
6
3
1000 pF
50
Ω
OUT
2
1
2
4
1000 pF
1
EXAMPLE OF SYSTEM APPLICATION
1st IF input
RF amp. ATT RF amp.
NT
IN
MIX. IF amp.
µPC2726T
VCO
PLL
OP
LPF
5 V
CC
3 RF
OUT
1 RF
IN
PART NUMBER
UPC2726T-E3
Note:
Embossed Tape, 8 mm wide,
<From ODU.>
EQUIVALENT CIRCUIT
RF
OUT
4
6
RF
IN
DI
S
CO
ORDERING INFORMATION
QTY
3K/Reel
2 GND
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
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