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2N6583E3

Description
Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2
CategoryDiscrete semiconductor    The transistor   
File Size71KB,1 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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2N6583E3 Overview

Power Bipolar Transistor, 10A I(C), 400V V(BR)CEO, NPN, Silicon, TO-3, Metal, 2 Pin, METAL CAN-2

2N6583E3 Parametric

Parameter NameAttribute value
package instructionMETAL CAN-2
Reach Compliance Codecompli
Maximum collector current (IC)10 A
Collector-emitter maximum voltage400 V
Minimum DC current gain (hFE)7
JEDEC-95 codeTO-3
JESD-30 codeO-MBFM-P2
Number of terminals2
Package body materialMETAL
Package shapeROUND
Package formFLANGE MOUNT
Polarity/channel typeNPN
surface mountNO
Terminal formPIN/PEG
Terminal locationBOTTOM
Transistor component materialsSILICON
Base Number Matches1

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