2N5877LEADFREE datasheet, PDF - EEWORLD Datasheet

2N5877LEADFREE: DescriptionPower Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN; CategoryDiscrete semiconductor The transistor; File Size52KB，4 Pages; ManufacturerCentral Semiconductor; Environmental Compliance

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2N5877LEADFREE Overview

Power Bipolar Transistor, 10A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Parts packaging code	TO-204AA
package instruction	TO-3, 2 PIN
Contacts	2
Reach Compliance Code	_compli
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	10 A
Collector-based maximum capacity	300 pF
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	4
JEDEC-95 code	TO-3
JESD-30 code	O-MBFM-P2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	200 °C
Minimum operating temperature	-65 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	150 W
Certification status	Not Qualified
Maximum rise time (tr)	700 ns
surface mount	NO
Terminal surface	Matte Tin (Sn)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	10
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	4 MHz
Maximum off time (toff)	1800 ns
VCEsat-Max	3 V
Base Number Matches	1

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