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SPS3080

Description
Trench Barrier Schottky Rectifier
CategoryDiscrete semiconductor    diode   
File Size141KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet Parametric View All

SPS3080 Overview

Trench Barrier Schottky Rectifier

SPS3080 Parametric

Parameter NameAttribute value
MakerSECOS
package instructionR-PSFM-T3
Reach Compliance Codecompli
ECCN codeEAR99
Other featuresHIGH RELIABILITY
applicationGENERAL PURPOSE
Shell connectionISOLATED
ConfigurationCOMMON CATHODE, 2 ELEMENTS
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.69 V
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Maximum non-repetitive peak forward current150 A
Number of components2
Phase1
Number of terminals3
Maximum operating temperature150 °C
Minimum operating temperature-40 °C
Maximum output current15 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Maximum repetitive peak reverse voltage80 V
Maximum reverse current200 µA
surface mountNO
technologySCHOTTKY
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
SPS3080
Elektronische Bauelemente
Voltage 80V 30.0 Amp
Trench Barrier Schottky Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen free
ITO-220
FEATURES
Trench
Barrier
Schottky technology
Low forward voltage drop
Low reverse current
High current capability
High reliability
High surge current capability
Epitaxial construction
B
N
D
E
M
A
MECHANICAL DATA
Case: Molded plastic
Epoxy: UL94V-0 rate flame retardant
Lead: Lead solderable per MIL-STD-202
method 208 guaranteed
Polarity: As Marked
Mounting position: Any
Weight: 1.98 g (Approximate)
H
J
K
L
C
G
F
REF.
H
J
K
L
M
N
Millimeter
Min.
Max.
2.70
4.00
0.90
1.50
0.50
0.90
2.34
2.74
2.40
3.00
φ
3.0
φ
3.4
L
REF.
1
3
2
A
B
C
D
E
F
G
Millimeter
Min.
Max.
14.60
15.70
9.50
10.50
12.60
14.00
4.30
4.70
2.30
3.2
2.30
2.90
0.30
0.75
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(Rating 25° ambient temperature unless otherwise s pecified. Single phase half wave, 60Hz, resistive or inductive load.
C
For capacitive load, de-rate current by 20%.)
Parameter
Maximum Recurrent Peak Reverse Voltage
Working Peak Reverse Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current
Voltage Rate of Chance (Rated V
R
)
Typical Thermal Resistance
Operating and Storage Temperature Range
(Per Leg)
(Per Device)
Symbol
V
RRM
V
RSM
V
DC
I
F
I
FSM
dv/dt
R
θ
JC
T
J
,T
STG
Rating
80
80
80
15
30
150
10000
4
-40~150
Unit
V
V
V
A
A
V /
µs
° /W
C
°
C
Peak Forward Surge Current, 8.3 ms single half sine-wave
ELECTRICAL CHARACTERISTICS
Parameter
Maximum Instantaneous Forward
Voltage
Maximum DC Reverse Current
2
at Rated DC Blocking Voltage
Typical Junction Capacitance
1
Symbol
V
F
Typ.
0.6
0.66
0.64
-
-
750
Max.
0.63
0.69
-
0.2
20
-
Unit
V
Test Condition
I
F
= 10A, T
J
= 25°
C
I
F
= 15A, T
J
= 25°
C
I
F
= 15 A, T
J
= 100°
C
C
T
J
=25°
T
J
=100°
C
I
R
C
J
mA
pF
NOTES:
1. Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2. Pulse Test:Pulse Width = 300
µs,
Duty Cycle
2.0%.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2013 Rev.A
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