MURF3020PTD thru MURF3060PTD
®
Pb
MURF3020PTD thru MURF3060PTD
Pb Free Plating Product
30.0 Ampere Insulated Dual Doubler Ultra Fast Recovery Rectifier Diodes
TO-3P(H)IS
Unit: inch (mm)
.217 (5.5)
.610 (15.5)
.177
(4.5)
.130 (3.3)
Features
Dual rectifier construction, positive center-tap
Plastic package has Underwriters Laboratory
Flammability Classification 94V0
Glass passivated chip junctions
Superfast recovery time, high voltage
Low forward voltage, high current capability
Low thermal resistance
Low power loss, high efficiency
High temperature soldering guaranteed:
o
260 C, 0.16”(4.06mm)from case for 10 seconds
.378
(9.6)
.965
(24.5)
.177
(4.5)
Mechanical Data
Cases: Insulated/Isolated TO-3P(H)IS
Terminals: Pure tin plated, lead free solderable per
MIL-STD-750. Method 2026
Polarity: As marked
Mounting position: Any
Mounting torque: 10in-lbs. Max.
Weight: 0.2 ounce, 5.6 gram approximately
.720
(18.3)
Min
.215 (5.47)
.138 (3.5)
Positive
Common Cathode
Suffix "PT"
Negative
Common Anode
Suffix "PTA"
Doubler
Tandem Polarity
Suffix "PTD"
Rating at 25
o
C
ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified
Current T
C
=125
C
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 15.0 A
Maximum DC Reverse Current @T
J
=25
C
At Rated DC Blocking Voltage @T
J
=125
C
Maximum Reverse Recovery Time (Note 1)
Typical junction Capacitance (Note 2)
Operating Junction and Storage
Temperature Range
o
o
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MURF3020PT MURF3040PT MURF3060PT
MURF3020PTA MURF3040PTA MURF3060PTA
UNIT
MURF3020PTD MURF3040PTD MURF3060PTD
200
140
200
400
280
400
30.0
600
420
600
V
V
V
A
V
RRM
V
RMS
V
DC
IF
(AV)
I
FSM
300
A
V
F
I
R
Trr
C
J
T
J
, T
STG
0.98
1.3
10
500
35
150
-55 to +150
1.7
V
uA
uA
nS
pF
o
C
NOTES : (1) Reverse recovery test conditions I
F
= 0.5A I
R
= 1
.
0A Irr = 0.25A.
(2) Thermal Resistance junction to terminal.
(3) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 1/2
http://www.thinkisemi.com/
MURF3020PTD thru MURF3060PTD
®
FIG.1 - FORWARD CURRENT DERATING CURVE
30
300
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT,
AMPERES
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
25
250
20
200
15
150
10
100
5
60 Hz Resistive or
Inductive load
0
0
50
100
o
50
0
150
1
10
100
LEAD TEMPERATURE, C
NUMBER OF CYCLES AT 60Hz
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
150
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
100
o
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
T
J
=125 C
MUR3040PTD
MUR3020PTD
10
15
1
1.0
MUR3060PTD
0.1
T
J
=25 C
o
0.1
0.2
0.4
0.6
0.8
T
J
=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
1.0
1.2
1.4
1.6
o
0.01
0
20
40
60
80
100
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
1000
JUNCTION CAPACITANCE, pF
T
J
= 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
o
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
.
.
.
Rev.04
© 2006 Thinki Semiconductor Co.,Ltd.
Page 2/2
http://www.thinkisemi.com/
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