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NZT7053

Description
1500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261
CategoryDiscrete semiconductor    The transistor   
File Size191KB,4 Pages
ManufacturerTexas Instruments
Websitehttp://www.ti.com.cn/
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NZT7053 Overview

1500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261

NZT7053 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerTexas Instruments
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
ECCN codeEAR99
Shell connectionCOLLECTOR
Maximum collector current (IC)1.5 A
Collector-based maximum capacity8 pF
Collector-emitter maximum voltage100 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-261
JESD-30 codeR-PDSO-G4
JESD-609 codee0
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Maximum power consumption environment1 W
Maximum power dissipation(Abs)1 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formGULL WING
Terminal locationDUAL
Transistor component materialsSILICON
Nominal transition frequency (fT)200 MHz
VCEsat-Max1.5 V

NZT7053 Related Products

NZT7053 2N7053
Description 1500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-261 1500mA, 100V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92
Is it Rohs certified? incompatible incompatible
Maker Texas Instruments Texas Instruments
package instruction SMALL OUTLINE, R-PDSO-G4 CYLINDRICAL, O-PBCY-T3
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 1.5 A 1.5 A
Collector-based maximum capacity 8 pF 8 pF
Collector-emitter maximum voltage 100 V 100 V
Configuration DARLINGTON DARLINGTON
Minimum DC current gain (hFE) 1000 1000
JEDEC-95 code TO-261 TO-92
JESD-30 code R-PDSO-G4 O-PBCY-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 4 3
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR ROUND
Package form SMALL OUTLINE CYLINDRICAL
Polarity/channel type NPN NPN
Maximum power dissipation(Abs) 1 W 1 W
Certification status Not Qualified Not Qualified
surface mount YES NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form GULL WING THROUGH-HOLE
Terminal location DUAL BOTTOM
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 200 MHz 200 MHz
VCEsat-Max 1.5 V 1.5 V
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