MM2102AN-L/B+ datasheet, PDF - EEWORLD Datasheet

MM2102AN-L/B+: DescriptionIC,SRAM,1KX1,MOS,DIP,16PIN,PLASTIC; Categorystorage storage; File Size184KB，3 Pages; ManufacturerTexas Instruments; Websitehttp://www.ti.com.cn/

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MM2102AN-L/B+ Overview

IC,SRAM,1KX1,MOS,DIP,16PIN,PLASTIC

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Texas Instruments
package instruction	DIP, DIP16,.3
Reach Compliance Code	unknown
Maximum access time	350 ns
I/O type	SEPARATE
JESD-30 code	R-PDIP-T16
JESD-609 code	e0
memory density	1024 bit
Memory IC Type	STANDARD SRAM
memory width	1
Number of terminals	16
word count	1024 words
character code	1000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	1KX1
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP16,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
surface mount	NO
technology	MOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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