Hall ICs
Omnipolar Detection Hall ICs
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,
BU52051NVX,BU52053NVX,BU52054GWZ,BU52055GWZ,
BU52056NVX,BU52061NVX,BD7411G
No.10045EFT02
●Description
The omnipolar Hall ICs are magnetic switches that can operate both S-and N-pole, upon which the output goes from Hi to
Low. In addition to regular single-output Hall ICs, We offer a lineup of dual-output units with a reverse output terminal (active
High).
●Features
1) Omnipolar detection
2) Micro power operation (small current using intermittent operation method)(BD7411G is excluded.)
3) Ultra-compact and thin wafer level CSP4 package (BU52054GWZ, BU52055GWZ)
4) Ultra-compact wafer level CSP4 package (BU52015GUL, BU52001GUL)
5) Ultra-Small outline package SSON004X1216 (BU52061NVX, BU52053NVX, BU52051NVX, BU52056NVX)
6) Ultra-Small outline package HVSOF5 (BU52011HFV, BU52021HFV)
7) Small outline package (BU52025G, BD7411G)
8) Line up of supply voltage
For 1.8V Power supply voltage (BU52054GWZ, BU52055GWZ, BU52015GUL, BU52061NVX, BU52053NVX,
BU52051NVX, BU52056NVX, BU52011HFV)
For 3.0V Power supply voltage (BU52001GUL)
For 3.3V Power supply voltage (BU52021HFV, BU52025G)
For 5.0V Power supply voltage (BD7411G)
9) Dual output type (BU52015GUL)
10) High ESD resistance 8kV (HBM) (6kV for BU52056NVX)
●Applications
Mobile phones, notebook computers, digital video camera, digital still camera, white goods etc.
●Lineup
matrix
Product name
BU52054GWZ
BU52055GWZ
BU52015GUL
BU52001GUL
BU52061NVX
BU52053NVX
BU52051NVX
BU52056NVX
BU52011HFV
BU52021HFV
BU52025G
BD7411G
Supply
voltage
(V)
1.65½3.60
1.65½3.60
1.65½3.30
2.40½3.30
1.65½3.60
1.65½3.60
1.65½3.30
1.65½3.60
1.65½3.30
2.40½3.60
2.40½3.60
4.50½5.50
Operate
point
(mT)
+/-6.3
+/-4.1
+/-3.0
+/-3.7
+/-3.3
+/-3.0
+/-3.0
+/-4.6
+/-3.0
+/-3.7
+/-3.7
+/-3.4
※
Hysteresis
(mT)
0.9
0.8
0.9
0.8
0.9
0.9
0.9
0.8
0.9
0.8
0.8
0.4
Period
(ms)
50
50
50
50
50
50
50
50
50
50
50
-
Supply current
(AVG)
(A)
5.0µ
5.0µ
5.0µ
8.0µ
4.0µ
5.0µ
5.0µ
5.0µ
5.0µ
8.0µ
8.0µ
2.0m
Output
type
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
CMOS
Package
UCSP35L1
UCSP35L1
VCSP50L1
VCSP50L1
SSON004X1216
SSON004X1216
SSON004X1216
SSON004X1216
HVSOF5
HVSOF5
SSOP5
SSOP5
※
※
※
※
※
※
※
※
※
※
※
※Plus
is expressed on the S-pole; minus on the N-pole
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
1/31
2010.12 - Rev.F
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52051NVX,
BU52053NVX,BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
●Absolute
maximum ratings
BU52054GWZ, BU52055GWZ (Ta=25℃)
Parameter
Symbol
Ratings
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
V
DD
I
OUT
Pd
T
opr
T
stg
-0.1½+4.5
※
1
±0.5
100
※
2
-40½+85
-40½+125
Technical Note
Unit
V
mA
mW
℃
℃
BU52015GUL (Ta=25℃)
Parameter
Symbol
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.1½+4.5
※
3
±0.5
420
※
4
-40½+85
-40½+125
Unit
V
mA
mW
℃
℃
※1.
Not to exceed Pd
※2.
Reduced by 1.00mW for each increase in Ta of 1℃ over 25℃
(mounted on 24mm×20mm Glass-epoxy PCB)
※3.
Not to exceed Pd
※4.
Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃
(mounted on 50mm×58mm Glass-epoxy PCB)
BU52001GUL (Ta=25℃)
Parameter
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.1½+4.5
※
5
±1
420
※
6
-40½+85
-40½+125
Unit
V
mA
mW
℃
℃
BU52061NVX, BU52053NVX, BU52051NVX,
BU52056NVX(Ta=25℃)
Parameter
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.1½+4.5
※
7
±0.5
2049
※
8
-40½+85
-40½+125
Unit
V
mA
mW
℃
℃
※5.
Not to exceed Pd
※6.
Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃
(mounted on 50mm×58mm Glass-epoxy PCB)
※7.
Not to exceed Pd
※8.
Reduced by 4.20mW for each increase in Ta of 1℃ over 25℃
(mounted on 50mm×58mm Glass-epoxy PCB)
BU52011HFV (Ta=25℃)
Parameter
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.1½+4.5
※
9
±0.5
536
※
10
-40½+85
-40½+125
Unit
V
mA
mW
℃
℃
BU52021HFV (Ta=25℃)
Parameter
Symbol
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.1½+4.5
※
11
±1
536
※
12
-40½+85
-40½+125
Unit
V
mA
mW
℃
℃
※9.
Not to exceed Pd
※10.
Reduced by5.36mW for each increase in Ta of 1℃ over 25℃
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
※11
Not to exceed Pd
※12.
Reduced by 5.36mW for each increase in Ta of 1℃ over 25℃
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
BU52025G (Ta=25℃)
Parameter
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.1½+4.5
※
13
±1
540
※
14
-40½+85
-40½+125
Unit
V
mA
mW
℃
℃
BD7411G (Ta=25℃)
Parameter
Power Supply Voltage
Output Current
Power Dissipation
Operating
Temperature Range
Storage
Temperature Range
Symbol
V
DD
I
OUT
Pd
T
opr
T
stg
Ratings
-0.3½+7.0
※
15
±1
540
※
16
-40½+85
-55½+150
Unit
V
mA
mW
℃
℃
※13.
Not to exceed Pd
※14.
Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
※15.
Not to exceed Pd
※16.
Reduced by 5.40mW for each increase in Ta of 1℃ over 25℃
(mounted on 70mm×70 mm×1.6mm Glass-epoxy PCB)
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
2/31
2010.12 - Rev.F
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52051NVX,
BU52053NVX,BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
●Magnetic,
Electrical characteristics
BU52054GWZ (Unless otherwise specified, V
DD
=1.80V, Ta=25℃)
Limits
Parameter
Symbol
Min.
Typ.
Power Supply Voltage
V
DD
B
opS
B
opN
B
rpS
B
rpN
B
hysS
B
hysN
T
p
1.65
-
-7.9
3.5
-
-
-
-
1.80
6.3
-6.3
5.4
-5.4
0.9
0.9
50
Technical Note
Max.
3.60
7.9
-
-
-3.5
-
-
100
Unit
V
Conditions
Operate Point
mT
Release Point
mT
Hysteresis
mT
Period
ms
B
rpN
<B<B
rpS
I
OUT
=-0.5mA
B<B
opN
, B
opS
<B
I
OUT
=+0.5mA
Average
※
17
Output High Voltage
V
OH
V
DD
-0.2
-
-
V
Output Low Voltage
V
OL
-
-
0.2
V
※
17
Supply Current
I
DD(AVG)
-
5
8
µA
Supply Current During Startup Time
I
DD(EN)
-
2.8
-
mA
During Startup Time Value
Supply Current During Standby Time
I
DD(DIS)
-
1.8
-
µA
During Standby Time Value
※17
B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
3/31
2010.12 - Rev.F
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52051NVX,
BU52053NVX,BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
Technical Note
BU52055GWZ (Unless otherwise specified, V
DD
=1.80V, Ta=25℃)
Limits
Parameter
Symbol
Min.
Typ.
Power Supply Voltage
V
DD
B
opS
B
opN
B
rpS
B
rpN
B
hysS
B
hysN
T
p
1.65
-
-5.5
1.5
-
-
-
-
1.80
4.1
-4.1
3.3
-3.3
0.8
0.8
50
Max.
3.60
5.5
-
-
-1.5
-
-
100
Unit
V
Conditions
Operate Point
mT
Release Point
mT
Hysteresis
mT
Period
ms
B
rpN
<B<B
rpS
I
OUT
=-0.5mA
B<B
opN
, B
opS
<B
I
OUT
=+0.5mA
Average
※
18
Output High Voltage
V
OH
V
DD
-0.2
-
-
V
Output Low Voltage
V
OL
-
-
0.2
V
※
18
Supply Current
I
DD(AVG)
-
5
8
µA
Supply Current During Startup Time
I
DD(EN)
-
2.8
-
mA
During Startup Time Value
Supply Current During Standby Time
I
DD(DIS)
-
1.8
-
µA
During Standby Time Value
※18
B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
4/31
2010.12 - Rev.F
BU52001GUL,BU52011HFV,BU52021HFV,BU52015GUL,BU52025G,BU52051NVX,
BU52053NVX,BU52054GWZ,BU52055GWZ,BU52056NVX,BU52061NVX,BD7411G
Technical Note
BU52015GUL (Unless otherwise specified, V
DD
=1.80V, Ta=25℃)
Limits
Parameter
Symbol
Min.
Typ.
Power Supply Voltage
V
DD
B
opS
B
opN
B
rpS
B
rpN
B
hysS
B
hysN
T
p
1.65
-
-5.0
0.6
-
-
-
-
1.80
3.0
-3.0
2.1
-2.1
0.9
0.9
50
Max.
3.30
5.0
-
-
-0.6
-
-
100
Unit
V
Conditions
Operate Point
mT
Release Point
mT
Hysteresis
mT
Period
ms
OUT1: B
rpN
<B<B
rpS
OUT2: B<B
opN
, B
opS
<B
I
OUT
= -0.5mA
OUT1: B<B
opN
, B
opS
<B
OUT2: B
rpN
<B<B
rpS
I
OUT
= +0.5mA
V
DD
=1.8V, Average
V
DD
=1.8V,
During Startup Time Value
V
DD
=1.8V,
During Standby Time Value
V
DD
=2.7V, Average
V
DD
=2.7V,
During Startup Time Value
V
DD
=2.7V,
During Standby Time Value
※
19
Output High Voltage
V
OH
V
DD
-0.2
-
-
V
※
19
Output Low Voltage
V
OL
-
-
0.2
V
Supply Current 1
I
DD1(AVG)
-
5
8
µA
Supply Current During Startup Time 1
I
DD1(EN)
-
2.8
-
mA
Supply Current During Standby Time 1
I
DD1(DIS)
-
1.8
-
µA
Supply Current 2
I
DD2(AVG)
-
8
12
µA
Supply Current During Startup Time 2
I
DD2(EN)
-
4.5
-
mA
Supply Current During Standby Time 2
I
DD2(DIS)
-
4.0
-
µA
※19
B = Magnetic flux density
1mT=10Gauss
Positive (“+”) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
Radiation hardiness is not designed.
www.rohm.com
© 2010 ROHM Co., Ltd. All rights reserved.
5/31
2010.12 - Rev.F
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