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BF722-TAPE-7

Description
TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
CategoryDiscrete semiconductor    The transistor   
File Size42KB,2 Pages
ManufacturerNXP
Websitehttps://www.nxp.com
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BF722-TAPE-7 Overview

TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power

BF722-TAPE-7 Parametric

Parameter NameAttribute value
MakerNXP
package instructionSMALL OUTLINE, R-PDSO-G4
Reach Compliance Codeunknown
Shell connectionCOLLECTOR
Maximum collector current (IC)0.05 A
Collector-based maximum capacity1.6 pF
Collector-emitter maximum voltage250 V
ConfigurationSINGLE
Minimum DC current gain (hFE)50
JESD-30 codeR-PDSO-G4
Number of components1
Number of terminals4
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)60 MHz
VCEsat-Max0.6 V

BF722-TAPE-7 Related Products

BF722-TAPE-7 BF720-TAPE-13 BF720-TAPE-7 BF722-TAPE-13
Description TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power 0.05A, NPN, Si, POWER TRANSISTOR 0.05A, NPN, Si, POWER TRANSISTOR TRANSISTOR 0.05 A, 250 V, NPN, Si, POWER TRANSISTOR, BIP General Purpose Power
Maker NXP NXP NXP NXP
package instruction SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4 SMALL OUTLINE, R-PDSO-G4
Reach Compliance Code unknown unknown unknown unknown
Shell connection COLLECTOR COLLECTOR COLLECTOR COLLECTOR
Maximum collector current (IC) 0.05 A 0.05 A 0.05 A 0.05 A
Collector-based maximum capacity 1.6 pF 1.6 pF 1.6 pF 1.6 pF
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 50 50 50 50
JESD-30 code R-PDSO-G4 R-PDSO-G4 R-PDSO-G4 R-PDSO-G4
Number of components 1 1 1 1
Number of terminals 4 4 4 4
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN NPN NPN
Certification status Not Qualified Not Qualified Not Qualified Not Qualified
surface mount YES YES YES YES
Terminal form GULL WING GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 60 MHz 60 MHz 60 MHz 60 MHz
VCEsat-Max 0.6 V 0.6 V 0.6 V 0.6 V

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