Preliminary
Datasheet
BCR12LM-16LB
Triac
Midium Power Use
Features
I
T (RMS)
: 12A
V
DRM
: 800 V
Tj: 150 °C
I
FGTI
, I
RGTI
, I
RGT III
:30 mA
Viso:1800V
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Passivation Type
UL Recognized: File No. E223904
R07DS0672EJ0100
Rev.1.00
Jul 23, 2012
Outline
RENESAS Package code: PRSS0003AF-A
(Package name: TO-220FL)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Notes: 1. Gate open.
Symbol
V
DRM
V
DSM
Voltage class
16
800
960
Unit
V
V
R07DS0672EJ0100 Rev.1.00
Jul 23, 2012
Page 1 of 7
BCR12LM-16LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
Viso
Ratings
12
120
60
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Conditions
Preliminary
Commercial frequency, sine full wave
360°conduction, Tc = 90C
Note3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute
T
1
T
2
G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Rated value
Min.
Typ.
Max.
—
—
2.0
—
—
1.6
—
—
—
—
—
—
0.2
0.1
—
10
1
—
—
—
—
—
—
—
—
—
—
—
1.5
1.5
1.5
30
30
30
—
—
4.1
—
—
Unit
mA
V
V
V
V
mA
mA
mA
V
V
C/W
V/s
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 20A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C, V
D
= 1/2 V
DRM
Tj = 150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C
Tj = 150C
Gate trigger curent
Note2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutation voltage
Note4
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance Rth (c-f) in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Test conditions
1. Junction temperature
Tj = 125/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –6 A/ms
3. Peak off-state voltage
V
D
= 400 V
Main Current
Main Voltage
(dv/dt)c
R07DS0672EJ0100 Rev.1.00
Jul 23, 2012
Page 2 of 7
BCR12LM-16LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
3
200
Rated Surge On-State Current
Surge On-State Current (A)
On-State Current (A)
10
2
160
120
10
1
Tj = 150°C
10
0
Tj = 25°C
80
40
10
−1
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
0
10
0
10
1
10
2
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics
Gate Trigger Current vs.
Junction Temperature
10
3
Typical Example
V
GM
= 10V
Gate Voltage (V)
10
1
V
GT
= 1.5V
P
G(AV)
=
0.5W
P
GM
= 5W
I
GM
= 2A
I
RGT I
, I
RGT III
10
2
10
0
I
FGT I
10
−1
I
RGT I
I
FGT I
, I
RGT III
10
2
V
GD
= 0.1V
10
3
10
1
10
1
–40
0
40
80
120
160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
5
10
3
Typical Example
4
3
10
2
2
1
10
1
–40
0
40
80
120
160
0
10
−1
10
0
10
1
10
2
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0672EJ0100 Rev.1.00
Jul 23, 2012
Page 3 of 7
BCR12LM-16LB
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
On-State Power Dissipation (W)
10
3
No Fins
Preliminary
Maximum On-State Power Dissipation
16
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
−1
1
10
10
2
10
3
10
4
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
160
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
Ambient Temperature (°C)
Case Temperature (°C)
140
120
100
80
60
40
20
0
0
Curves apply regardless
of conduction angle
140
120
100
80
360° Conduction
Resistive,
inductive loads
2
4
6
8
10
12
14
16
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
0
2
6
4
8
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
6
Typical Example
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
10
5
10
4
10
3
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
10
2
–40
0
40
80
120
160
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0672EJ0100 Rev.1.00
Jul 23, 2012
Page 4 of 7
BCR12LM-16LB
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
Typical Example
Preliminary
Latching Current vs.
Junction Temperature
10
3
Latching Current (mA)
Distribution
10
2
T
2
+, G–
Typical Example
10
2
10
1
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
10
1
–40
0
40
80
120
160
10
0
–40
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
I Quadrant
60
40
20
0
10
1
10
2
10
3
10
4
Typical Example
Tj = 125°C
III Quadrant
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
I Quadrant
60
40
20
0
10
1
10
2
10
3
10
4
Typical Example
Tj = 150°C
III Quadrant
Rate of Rise of Off-State Voltage (V/μs)
Rate of Rise of Off-State Voltage (V/μs)
Commutation Characteristics (Tj=125°C)
10
2
Commutation Characteristics (Tj=150°C)
10
2
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Main Voltage
(dv/dt)c
Main Current
I
T
τ
Time
V
D
(di/dt)c
Time
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
I Quadrant
10
1
Minimum
Value
III Quadrant
I Quadrant
10
1
III Quadrant
10
0
10
0
Typical Example
Tj = 125°C, I
T
= 4A
τ
= 500μs,
V
D
= 200V, f = 3Hz
10
1
10
2
Typical Example
Tj = 150°C, I
T
= 4A
τ
= 500μs,
V
D
= 200V, f = 3Hz
10
0
10
0
10
1
10
2
Rate of Decay of On-State
Commutating Current (A/ms)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0672EJ0100 Rev.1.00
Jul 23, 2012
Page 5 of 7
Microcontroller MCU
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