AMMP-6421
13-16 GHz 1W Power Amplifier in SMT Package
Data Sheet
Description
The AMMP-6421 MMIC is a 1W power amplifier in a
surface mount package designed for use in transmit-
ters that operate at frequencies between 13GHz and
16GHz. Between 13GHz and 16GHz, it provides 29 dBm
of output power (P-1dB) and 26dB of small-signal gain.
This power amplifier is optimized for linear operation with
an output third order intercept point (OIP3) of +36dBm.
The AMMC-6421 is manufactured with Avago’s unique
enhancement mode 0.25m GaAs PHEMT process
that eliminates the need for negative DC biasing.
Features
5x5mm SMT package
One-watt saturated output power
50
match on input and output
Typical Specifications (Vd=5V, Idsq=0.6A)
Frequency range 13 to 16 GHz
Small signal Gain of 26dB
Output power @P-1 of 29dBm (Typ.)
Input/Output return-loss of -6dB/-8dB
Package Diagram
Vg
1
Vd1
2
Vd2
3
Applications
4
RF OUT
RF IN
8
Microwave Radio systems
Satellite VSAT, Up/Down Link
LMDS & Pt-Pt mmW Long Haul
Broadband Wireless Access (including 802.16 and
802.20 WiMax)
WLL and MMDS loops
Functional Block Diagram
7
Vg
6
Vd1
5
1
2
3
Pin
1
2
3
4
5
6
7
8
Function
Vg
Vd1
Vd2
RF_OUT
Vd2
Vd1
Vg
RF_IN
Vd2
8
4
7
6
5
RoHS-Exemption
Please refer to hazardous substances table on page 10.
Note: MSL Rating = Level 2A
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A) = 50 V
ESD Human Body Model (Class 0) = 200 V
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
Electrical Specifications
1. Small/Large -signal data measured in a fully de-embedded test fixture form TA = 25°C.
2. Pre-assembly into package performance verified 100% on wafer.
3. This final package part performance is verified by a functional test correlated to actual performance at one or more
frequencies.
4. Specifications are derived from measurements in a 50 Ω test environment. Aspects of the amplifier performance may
be improved over a more narrow bandwidth by application of additional conjugate, linearity, or low noise (Гopt)
matching.
5. The Gain at P1dB tested at 13, 14.5 and 16 GHz guaranteed with measurement accuracy +/-1dB for Gain, +/-1.2dB for
P1dB at 13 GHz and +/-1.5dB for P1dB at 14.5 GHz and 16 GHz.
6. NF is measure on-wafer. Additional bond wires (-0.2nH) at Input could improve NF at some frequencies.
Table 1. RF Electrical Characteristics
TA=25°C, Vd=5.0V, Idq=0.6mA, Vg= +0.5V, Zo=50 Ω
13GHz
Parameter
Small Signal Gain, Gain
Output Power at 1dBGain Compression, P1dB
Output Power at 3dBGain Compression, P3dB
Output Third Order Intercept Point, OIP3;
Point Δf= 2 MHz; Pout = +10 dBm, SCL
Min Reverse Isolation, Isolation
Input Return Loss, Rlin
Output Return Loss, RLout
14.5GHz
Typ
26
29
30
36
45
6
8
16GHz
Max Min
28
24
25
Min
24
27
Max Min
30
22
26
Typ
26
29
30
36
45
6
8
Typ
26
29
30
36
45
6
8
Max
30
Unit
dB
dBm
dBm
dBm
dB
dB
dB
Comment
Table 2. Recommended Operating Range
1. Ambient operational temperature TA = 25°C unless otherwise noted.
2. Channel-to-backside Thermal Resistance (Tchannel (Tc) = 34°C) as measured using infrared microscopy. Thermal
Resistance at backside temperature (Tb) = 25°C calculated from measured data.
Description
Drain Supply Current, Id
Gate Supply Voltage, Vg
Min.
Typical
600
0.5
Max.
Unit
mA
V
Comments
Vd = 5V, Vg set for typical Id(q) Typical
Id(q) = 600mA
2
Table 3. Thermal Properties
Parameter
Thermal Resistance (channel to backside),
jc
Channel Temperature, Tch
Note:
1. Assume SnPb soldering to an evaluation RF board at 85°C base plate temperatures. Worst case for the channel temperature is under the quiescent
operation. At saturated output power, DC power consumption rises to 5 W with 1.43 W RF power delivered to load. Power dissipation is 3.57 W and
the temperature rise in the channel is 33.6°C. In this condition, the base plate temperature must be remained below 94.3°C to maintain maximum
operating channel temperature below 155°C.
Test Conditions
Ambient operational temperature TA = 25°C
Value
jc
= 17 °C/W
Tch = 136 °C
Absolute Minimum and Maximum Ratings
Table 4. Minimum and Maximum Ratings
Description
Drain Supply Voltage, Vd
Gate Supply Voltage, Vg
Power Dissipation, Pd
[2,3]
RF CW Input Power, Pin
[2]
Channel Temperature, Tch, max
[4,5]
Storage Case Temperature, Tstg
Maximum Assembly Temperature, Tmax
-65
Min.
Max.
6
1
8
23
+150
+150
260
Unit
V
V
W
dBm
°C
°C
°C
Comments
CW
30 second maximum
Notes:
1. Operation in excess of any one of these conditions may result in permanent damage to this device.
2. Combinations of supply voltage, drain current, input power, and output power shall not exceed PD.
3. When operate at this condition with a base plate temperature of 85°C, the median time to failure (MTTF) is significantly reduced.
4. These ratings apply to each individual FET
5. The operating channel temperature will directly affect the device MTTF. For maximum life, it is recommended that junction temperatures be
maintained at the lowest possible levels.
3
AMMP-6421 Typical Performances
(Data obtained from 3.5-mm connector based test fixture, and this data is including connecter loss, and board loss.)
(T
A
= 25°C, V
d
= 5 V, I
d(q)
= 600 mA, Z
in
= Z
out
= 50
)
40
35
30
S21[dB]
25
20
15
10
5
0
8
10
12
14
16
Frequency [GHz]
18
20
-80
-20
8
10
12
14
16
Frequency [GHz]
18
20
-60
-40
S21[dB]
S12[dB]
-20
Return Loss [dB]
S12 [dB]
-5
0
0
S11[dB]
S22[dB]
-10
-15
Figure 1. Typical Gain and Reverse Isolation
Figure 2. Typical Return Loss (Input and Output)
35
30
P-1 [dBm], PAE [%]
25
20
15
10
5
8
10
12
14
16
Frequency [GHz]
18
20
P-1
PAE
Noise Figure [dB]
10
8
6
4
2
0
8
10
12
14
16
Frequency [GHz]
18
20
Figure 3. Typical Output Power (@P-1) and PAE and Frequency
Figure 4. Typical Noise Figure
40
35
Po[dBm], and, PAE[%]
30
25
20
15
10
5
0
-25
-20
-15
-10
-5
0
Pin [dBm]
5
10
15
Pout(dBm)
PAE[%]
Id(total)
1600
1400
1200
1000
800
600
400
200
0
Ids [mA]
IM3 Level [dBc]
-14
-16
-18
-20
-22
-24
-26
-28
-30
-32
-34
-36
-38
-40
10
11
12
13
14 15 16 17
Frequency [GHz]
18
19
20
Figure 5. Typical Output Power, PAE, and Total Drain Current versus Input
Power at 14GHz
4
Figure 6. Typical IM3 level vs. Frequency at +20dBm output single carrier
level (SCL)
Typical Performance
(continued)
(Data obtained from 3.5-mm connector based test fixture, and this data is including connecter loss, and board loss.)
(T
A
= 25°C, V
d
= 5 V, I
d(q)
= 600 mA, Z
in
= Z
out
= 50
)
0
-10
-20
IM3 [dBc]
-30
-40
-50
-60
-70
-80
4
6
8 10 12 14 16 18 20 22 24 26
SCL [dBm]
IM3[dBc]
Ids[mA]
900
850
800
IM3 [dBc]
Ids [mA]
750
700
650
600
550
500
0
-10
-20
-30
-40
-50
-60
-70
-80
4
6
8 10 12 14 16 18 20 22 24 26
SCL [dBm]
IM3[dBc]
Ids[mA]
900
850
800
750
700
650
600
550
500
Ids [mA]
Ids [mA]
Figure 7. Typical IM3 level and Ids vs. single carrier output level at 13GHz
Figure 8. Typical IM3 level and Ids vs. single carrier output level at 14GHz
0
-10
-20
IM3 [dBc]
-30
-40
-50
-60
-70
-80
4
6
8 10 12 14 16 18 20 22 24 26
SCL [dBm]
IM3[dBc]
Ids[mA]
900
850
800
IM3 [dBc]
Ids [mA]
750
700
650
600
550
500
0
-10
-20
-30
-40
-50
-60
-70
-80
4
6
8 10 12 14 16 18 20 22 24 26
SCL [dBm]
IM3[dBc]
Ids[mA]
900
850
800
750
700
650
600
550
500
Figure 9. Typical IM3 level and Ids vs. single carrier output level at 15GHz
Figure 10. Typical IM3 level and Ids vs. single carrier output level at 16GHz
5
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