UZX5T869GTC datasheet, PDF - EEWORLD Datasheet

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UZX5T869GTC: DescriptionPower Bipolar Transistor, 7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN; CategoryDiscrete semiconductor The transistor; File Size121KB，6 Pages; ManufacturerZetex Semiconductors; Websitehttp://www.zetex.com/; Environmental Compliance

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UZX5T869GTC Overview

Power Bipolar Transistor, 7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN

UZX5T869GTC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Zetex Semiconductors
package instruction	SOT-223, 4 PIN
Reach Compliance Code	not_compliant
ECCN code	EAR99
Shell connection	COLLECTOR
Maximum collector current (IC)	7 A
Collector-emitter maximum voltage	25 V
Configuration	SINGLE
Minimum DC current gain (hFE)	40
JESD-30 code	R-PDSO-G4
JESD-609 code	e3
Humidity sensitivity level	1
Number of components	1
Number of terminals	4
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	40
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

UZX5T869GTC Preview

ZX5T869G

25V NPN LOW SATURATION TRANSISTOR IN SOT223

SUMMARY

BV

CEO

= 25V : R

SAT

= 27m ; I

C

= 7A

DESCRIPTION

Packaged in the SOT223 outline this new 5th generation low saturation 25V

NPN transistor offers extremely low on state losses making it ideal for use in

DC-DC circuits and various driving and power management functions.

FEATURES

•

Extemely low equivalent on-resistance;

R

SAT

= 27m at 6.5A

•

7 amps continuous current

•

Up to 20 amps peak current

•

Very low saturation voltages

•

Excellent h

FE

characteristics up to 20 amps

SOT223

APPLICATIONS

•

DC - DC converters

•

MOSFET gate drivers

•

Charging circuits

•

Power switches

•

Motor control

PINOUT

ORDERING INFORMATION

DEVICE

ZX5T869GTA

ZX5T869GTC

REEL

SIZE

7”

13”

TAPE

WIDTH

12mm

embossed

QUANTITY PER

REEL

1000 units

4000 units

DEVICE MARKING

•

X5T869

TOP VIEW

ISSUE 1 - NOVEMBER 2003

1

SEMICONDUCTORS

ZX5T869G

ABSOLUTE MAXIMUM RATINGS

PARAMETER

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Continuous collector current

Peak pulse current

Power dissipation at T

A

=25°C

(a)

Linear derating factor

Power dissipation at T

A

=25°C

Linear derating factor

Operating and storage temperature range

T

j

, T

stg

(b)

SYMBOL

BV

CBO

BV

CEO

BV

EBO

I

C

I

CM

P

D

P

D

LIMIT

60

25

7.5

7

20

3.0

24

1.6

12.8

-55 to +150

UNIT

V

A

W

mW/°C

W

mW/°C

°C

THERMAL RESISTANCE

PARAMETER

Junction to ambient

(a)

Junction to ambient

(b)

SYMBOL

R

JA

R

JA

VALUE

42

78

UNIT

°C/W

NOTES

(a) For a device surface mounted on 52mm x 52mm x 1.6mm FR4 PCB with high coverage of single sided 2oz copper, in still air conditions.

(b) For a device surface mounted on 25mm x 25mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions.

ISSUE 1 - NOVEMBER 2003

SEMICONDUCTORS

2

ZX5T869G

CHARACTERISTICS

ISSUE 1 - NOVEMBER 2003

3

SEMICONDUCTORS

ZX5T869G

ELECTRICAL CHARACTERISTICS

(at T

amb

= 25°C unless otherwise stated)

PARAMETER

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

SYMBOL

BV

CBO

BV

CER

BV

CEO

BV

EBO

I

CBO

I

CER

R 1k

I

EBO

V

CE(SAT)

26

51

98

173

Base-emitter saturation voltage

Base-emitter turn-on voltage

Static forward current transfer ratio

V

BE(SAT)

V

BE(ON)

h

FE

300

200

40

Transition frequency

Output capacitance

Switching times

f

T

C

OBO

t

ON

t

OFF

* Measured under pulsed conditions. Pulse width

1010

885

400

450

300

90

150

48

33

464

300 s; duty cycle

2%.

pF

ns

MIN.

60

25

7.5

TYP.

105

35

8.2

20

0.5

20

0.5

10

40

65

80

150

220

1080

980

MAX. UNIT CONDITIONS

V

nA

A

nA

A

nA

mV

I

C

=100 A

I

C

=1 A, RB 1k

I

C

=10mA*

I

E

=100 A

V

CB

=50V

V

CB

=50V, T

amb

=100 C

V

CB

=50V

V

CB

=50V, T

amb

=100 C

V

EB

=6V

I

C

=500mA, I

B

=10mA*

I

C

=1A, I

B

=100mA*

I

C

=1A, I

B

=10mA*

I

C

=2A, I

B

=10mA*

I

C

=6.5A, I

B

=150mA*

I

C

=6.5A, I

B

=150mA*

I

C

=6.5A, V

CE

=1V*

I

C

=10mA, V

CE

=1V*

I

C

=1A, V

CE

=1V*

I

C

=7A, V

CE

=1V*

I

C

=20A, V

CE

=1V*

I

C

=100mA, V

CE

=10V

f=50MHz

V

CB

=10V, f=1MHz*

I

C

=1A, V

CC

=10V,

I

B1

=-I

B2

=100mA

ISSUE 1 - NOVEMBER 2003

SEMICONDUCTORS

4

ZX5T869G

TYPICAL CHARACTERISTICS

ISSUE 1 - NOVEMBER 2003

5

SEMICONDUCTORS

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UZX5T869GTC Related Products

	UZX5T869GTC	UZX5T869GTA
Description	Power Bipolar Transistor, 7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN	Power Bipolar Transistor, 7A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin, SOT-223, 4 PIN
Is it Rohs certified?	conform to	conform to
Maker	Zetex Semiconductors	Zetex Semiconductors
package instruction	SOT-223, 4 PIN	SOT-223, 4 PIN
Reach Compliance Code	not_compliant	not_compliant
ECCN code	EAR99	EAR99
Shell connection	COLLECTOR	COLLECTOR
Maximum collector current (IC)	7 A	7 A
Collector-emitter maximum voltage	25 V	25 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	40	40
JESD-30 code	R-PDSO-G4	R-PDSO-G4
JESD-609 code	e3	e3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	4	4
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal surface	Matte Tin (Sn)	Matte Tin (Sn)
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	40	40
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz

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