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Datasheet> All Categories > Discrete semiconductor> The transistor> MUN5111RT1
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MUN5111RT1

Description
Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size200KB，11 Pages
ManufacturerLRC
Websitehttp://www.lrc.cn
Download Datasheet Parametric Compare View All

MUN5111RT1 Overview

Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon

MUN5111RT1 Parametric

Parameter NameAttribute value
MakerLRC
package instruction,
Reach Compliance Codeunknown
Maximum collector current (IC)0.1 A
Minimum DC current gain (hFE)35
Number of components1
Polarity/channel typePNP
Maximum power dissipation(Abs)0.31 W
surface mountYES
Transistor component materialsSILICON

MUN5111RT1 Preview

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base–emitter
resistor. The BRT eliminates these individual components by integrating
them into a single device. The use of a BRT can reduce both system cost
and board space. The device is housed in the SC–70/SOT–323 package
which is designed for low power surface mount applications.
MUN5111RT1
SERIES
PNP SILICON
BIAS RESISTOR
TRANSISTORS
3
1
2
CASE 419, STYLE 3
SOT–323 (SC–70)
•
Simplifies Circuit Design
•
Reduces Board Space
•
Reduces Component Count
•
The SC–70/SOT–323 package can be soldered using wave or reflow.
The modified gull–winged leads absorb thermal stress during soldering
eliminating the possibility of damage to the die.
PIN 1
BASE
(INPUT)
R
1
PIN 2
COLLECTOR
(OUTPUT)
PIN 3
EMITTER
(GROUND)
R
2
MARKINGDIAGRAM
•
Available in 8 mm embossed tape and reel
Use the Device Number to order the 7 inch/3000 unit reel.
Replace “T1” with “T3” in the Device Number to order
the 13 inch/10,000 unit reel.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table on page2 of this data
sheet.
6X
X
M
6X
M
=Specific Device Code
=(See Marking Table)
=Date Code
MAXIMUM RATINGS
(T
A
= 25°C unless otherwise noted)
Rating
Collector-Base Voltage
Collector-Emitter Voltage
Collector Current
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
Thermal Resistance –
Junction-to-Ambient
Thermal Resistance –
Junction-to-Lead
Junction and Storage
Temperature Range
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
Symbol
V
CBO
V
CEO
I
C
Symbol
P
D
Value
50
50
100
Unit
Vdc
Vdc
mAdc
Max
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
618 (Note 1)
403 (Note 2)
280 (Note 1)
332 (Note 2)
–55 to +150
Unit
mW
°C/W
°C/W
°C/W
°C
R
θJA
R
θJL
T
J
, T
stg
MUN5111RT1 Series–1/11
LESHAN RADIO COMPANY, LTD.
MUN5111RT1 SERIES
DEVICE MARKING AND RESISTOR VALUES
Device
MUN5111RT1
MUN5112RT1
MUN5113RT1
MUN5113RT3
MUN5114RT1
MUN5115RT1 (Note 3)
MUN5116RT1 (Note 3)
MUN5130RT1 (Note 3)
MUN5131RT1 (Note 3)
MUN5132RT1 (Note 3)
MUN5133RT1 (Note 3)
MUN5134RT1 (Note 3)
MUN5135RT1 (Note 3)
MUN5136RT1
MUN5137RT1
Package
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
SC–70/SOT–323
Marking
6A
6B
6C
6D
6E
6F
6G
6H
6J
6K
6L
6M
6N
6P
R1 (K)
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
R2 (K)
10
22
47
47
∞
∞
1.0
2.2
4.7
47
47
47
100
22
Shipping
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3000/Tape & Reel
3. New devices. Updated curves to follow in subsequent data sheets.
MUN5111RT1 Series–2/11
LESHAN RADIO COMPANY, LTD.
MUN5111RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Collector–Base Cutoff Current (V
CB
= 50 V, I
E
= 0)
Collector–Emitter Cutoff Current (V
CE
= 50 V, I
B
= 0)
Emitter–Base Cutoff Current
(V
EB
= 6.0 V, I
C
= 0)
MUN5111RT1
MUN5112RT1
MUN5113RT1
MUN5114RT1
MUN5115RT1
MUN5116RT1
MUN5130RT1
MUN5131RT1
MUN5132RT1
MUN5133RT1
MUN5134RT1
MUN5135RT1
MUN5136RT1
MUN5137RT1
I
CBO
I
CEO
I
EBO
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
50
50
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
100
500
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
–
–
nAdc
nAdc
mAdc
Collector–Base Breakdown Voltage (I
C
= 10
µA,
I
E
= 0)
Collector–Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CBO
V
(BR)CEO
Vdc
Vdc
ON CHARACTERISTICS
(Note 4)
DC Current Gain
(V
CE
= 10 V, I
C
= 5.0 mA)
MUN5111RT1
MUN5112RT1
MUN5113RT1
MUN5114RT1
MUN5115RT1
MUN5116RT1
MUN5130RT1
MUN5131RT1
MUN5132RT1
MUN5133RT1
MUN5134RT1
MUN5135RT1
MUN5136RT1
MUN5137RT1
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
–
60
100
140
140
250
250
5.0
15
27
140
130
140
150
140
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.25
Vdc
Collector–Emitter Saturation Voltage (I
C
= 10 mA, I
E
= 0.3 mA)
(I
C
= 10 mA, I
B
= 5 mA) MUN5130RT1/MUN5131RT1
(I
C
= 10 mA, I
B
= 1 mA) MUN5115RT1/MUN5116RT1/
MUN5132RT1/MUN5133RT1/MUN5134RT1
Output Voltage (on)
(V
CC
= 5.0 V, V
B
= 2.5 V, R
L
= 1.0 kΩ)
MUN5111RT1
MUN5112RT1
MUN5114RT1
MUN5115RT1
MUN5116RT1
MUN5130RT1
MUN5131RT1
MUN5132RT1
MUN5133RT1
MUN5134RT1
MUN5135RT1
MUN5113RT1
MUN5136RT1
MUN5137RT1
V
CE(sat)
V
OL
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
(V
CC
= 5.0 V, V
B
= 3.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 5.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 4.0 V, R
L
= 1.0 kΩ)
4. Pulse Test: Pulse Width < 300
µs,
Duty Cycle < 2.0%
MUN5111RT1 Series–3/11
LESHAN RADIO COMPANY, LTD.
MUN5111RT1 SERIES
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted) (Continued)
Characteristic
Output Voltage (off) (V
CC
= 5.0 V, V
B
= 0.5 V, R
L
= 1.0 kΩ)
(V
CC
= 5.0 V, V
B
= 0.050 V, R
L
= 1.0 kΩ)
MUN5130RT1
MUN5115RT1
(V
CC
= 5.0 V, V
B
= 0.25 V, R
L
= 1.0 kΩ)
MUN5116RT1
MUN5131RT1
MUN5132RT1
Input Resistor
MUN5111RT1
MUN5112RT1
MUN5113RT1
MUN5114RT1
MUN5115RT1
MUN5116RT1
MUN5130RT1
MUN5131RT1
MUN5132RT1
MUN5133RT1
MUN5134RT1
MUN5135RT1
MUN5136RT1
MUN5137RT1
MUN5111RT1/MUN5112RT1/MUN5113RT1/
MUN5136RT1
MUN5114RT1
MUN5115RT1/MUN5116RT1
MUN5130RT1/MUN5131RT1/MUN5132RT1
MUN5133RT1
MUN5134RT1
MUN5135RT1
MUN5137RT1
Symbol
V
OH
Min
4.9
Typ
–
Max
–
Unit
Vdc
R1
7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
70
32.9
0.8
0.17
–
0.8
0.055
0.38
0.038
1.7
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
100
47
1.0
0.21
–
1.0
0.1
0.47
0.047
2.1
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
130
61.1
1.2
0.25
–
1.2
0.185
0.56
0.056
2.6
kΩ
Resistor Rati
R
1
/R
2
250
PD , POWER DISSIPATION (MILLIWATTS)
200
150
100
50
0
-50
R
θJA
= 833°C/W
0
50
100
T
A
, AMBIENT TEMPERATURE (°C)
150
Figure 1. Derating Curve
MUN5111RT1 Series–4/11
LESHAN RADIO COMPANY, LTD.
MUN5111RT1 SERIES
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5111RT1
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1
hFE , DC CURRENT GAIN (NORMALIZED)
I
C
/I
B
= 10
1000
V
CE
= 10 V
T
A
= -25°C
0.1
75°C
25°C
T
A
= 75°C
100
25°C
-25°C
0.01
0
20
I
C
, COLLECTOR CURRENT (mA)
40
50
10
1
10
I
C
, COLLECTOR CURRENT (mA)
100
Figure 2. V
CE(sat)
versus I
C
Figure 3. DC Current Gain
4
f = 1 MHz
l
E
= 0 V
T
A
= 25°C
100
75°C
25°C
T
A
= -25°C
Cob , CAPACITANCE (pF)
3
IC, COLLECTOR CURRENT (mA)
10
1
2
0.1
1
0.01
0
1
2
V
O
= 5 V
3
4
5
6
7
V
in
, INPUT VOLTAGE (VOLTS)
8
9
10
0
0
10
20
30
40
V
R
, REVERSE BIAS VOLTAGE (VOLTS)
50
0.001
Figure 4. Output Capacitance
Figure 5. Output Current versus Input Voltage
100
V
O
= 0.2 V
V in , INPUT VOLTAGE (VOLTS)
10
T
A
= -25°C
25°C
75°C
1
0.1
0
10
20
30
I
C
, COLLECTOR CURRENT (mA)
40
50
Figure 6. Input Voltage versus Output Current
MUN5111RT1 Series–5/11
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

MUN5111RT1 Related Products

MUN5111RT1 MUN5114RT1 MUN5115RT1 MUN5133RT1 MUN5134RT1 MUN5135RT1 MUN5136RT1 MUN5137RT1 MUN5112RT1 MUN5116RT1
Description Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon Small Signal Bipolar Transistor, 0.1A I(C), 1-Element, PNP, Silicon
Maker LRC LRC LRC LRC LRC LRC LRC LRC LRC LRC
Reach Compliance Code unknown unknown unknown unknown unknown unknown unknown unknown unknown unknown
Maximum collector current (IC) 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A 0.1 A
Minimum DC current gain (hFE) 35 80 160 80 80 80 80 80 60 160
Number of components 1 1 1 1 1 1 1 1 1 1
Polarity/channel type PNP PNP PNP PNP PNP PNP PNP PNP PNP PNP
Maximum power dissipation(Abs) 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W 0.31 W
surface mount YES YES YES YES YES YES YES YES YES YES
Transistor component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON

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