TVB270SB-L datasheet, PDF - EEWORLD Datasheet

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TVB270SB-L: Description350V, SILICON SURGE PROTECTOR, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN; CategoryAnalog mixed-signal IC Trigger device; File Size68KB，2 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com; Environmental Compliance

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TVB270SB-L Overview

350V, SILICON SURGE PROTECTOR, DO-214AA, ROHS COMPLIANT, PLASTIC, SMB, 2 PIN

TVB270SB-L Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TE Connectivity
Parts packaging code	DO-214AA
package instruction	SMALL OUTLINE, R-PDSO-C2
Contacts	2
Reach Compliance Code	compliant
Other features	UL RECOGNIZED
Maximum breakover voltage	350 V
Configuration	SINGLE
Maximum off-state DC voltage	275 V
JEDEC-95 code	DO-214AA
JESD-30 code	R-PDSO-C2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Certification status	Not Qualified
surface mount	YES
Terminal surface	Matte Tin (Sn)
Terminal form	C BEND
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Trigger device type	SILICON SURGE PROTECTOR

TVB270SB-L Preview

Tyco / Electronics

Raychem Circuit Protection

308 Constitution Drive

Menlo Park, CA 94025-1164

Phone: 800-227-4856

Fax: 800-227-4866

PRODUCT: TVB270SB-L

SiBar™

Thyristor Surge Protectors

DOCUMENT: SCD 25547

PCN: F80709

REV LETTER: E

REV DATE: FEBRUARY 7, 2006

PAGE NO.: 1 OF 2

Specification Status: RELEASED

PHYSICAL DESCRIPTION

Marking:

270B

Date Code

Device Code

Raychem Logo

MIN

1.90

(0.075)

D**

MIN

MAX

MIN

MAX

mm:

4.06

4.57

3.30

3.81

in*: (0.160) (0.180) (0.130) (0.150)

MAX

MIN

MAX

MIN

MAX

MIN

MAX

MIN

MAX

2.41

1.96

2.11

0.051 0.152

0.15

0.30

0.76

1.27

(0.095) (0.077) (0.083) (0.002) (0.006) (0.006) (0.012) (0.030) (0.050)

REF

MIN

MAX

mm:

0.51

5.21

5.59

in*: (0.020) (0.205) (0.220)

*Rounded off approximation

** D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P

Other Physical Characteristics

Form Factor:

Lead Material:

Encapsulation Material:

Solderability:

Solder Heat Withstand:

Solvent Resistance:

Mechanical Shock:

Vibration:

SMB (Surface Mount, JEDEC DO-214AA Package)

Matte Tin finish

Epoxy, meets UL94 V-0 requirements

per MIL-STD-750, Method 2026

per MIL-STD-750, Method 2031

per MIL-STD-750, Method 1022

per MIL-STD-750, Method 2016

per MIL-STD-750, Method 2056

Tape and Reel packaging per EIA 481-1

Agency Recognition:

Precedence:

CAUTION:

Materials Information

RoHS Compliant

This specification takes precedence over documents referenced herein.

Operation beyond the rated voltage or current may result in rupture, electrical arcing or flame.

ELV Compliant

Tyco / Electronics

Raychem Circuit Protection

308 Constitution Drive

Menlo Park, CA 94025-1164

Phone: 800-227-4856

Fax: 800-227-4866

PRODUCT: TVB270SB-L

SiBar™

Thyristor Surge Protectors

DOCUMENT: SCD 25547

PCN: F80709

REV LETTER: E

REV DATE: FEBRUARY 7, 2006

PAGE NO.: 2 OF 2

DEVICE RATINGS @ 25º C (Both Polarities)

Parameter

Repetitive Off-State Voltage, Maximum at ID = 5 µA

Non-Repetitive Peak

Telcordia GR-1089 CORE 10x1000 µs

Impulse Current

TIA-968 lightning Type A Metallic 10/560 µs

Double exponential

TIA-968 lightning Type A Longit. 10/160 µs

Waveform

Telcordia GR-1089 Intrabuilding 2/10 µs

(Notes 1 and 2)

IEC61000-4-5 (Voc 1.2/50us) 8/20 µs

ITU-T K.20/K.21 (Voc 10/700us) 5/310 µs

TIA-968 lightning Type B (Voc 9/720us) 5/320 µs

Critical Rate of Rise of On-State Current

Pulse Power Amplifier, C= 30µF, V=600V

Maximum 2x10 µsec waveform, V

=1.25kV, I

=250A peak

DEVICE THERMAL RATINGS

Storage Temperature Range

Operating Temperature Range

Blocking or conducting state

Overload Junction Temperature

Maximum; Conducting state only

Maximum Lead Temperature for Soldering Purpose; for 10 seconds

Symbol

VDM

IPP

di/dt

Value

270

100

150

250

100

500

170

Units

A/µs

TSTG

-55 to 150

-40 to 125

+150

+260

ºC

ELECTRICAL CHARACTERISTICS Both polarities (T

@ 25ºC unless otherwise noted)

Characteristics

Symbol

Min

VBO

----

Breakover Voltage

(+25ºC)

(dv/dt = 0.4kV/µsec, I

=900mA, V

= 500V (both polarities))

Breakover Voltage Temperature Coefficient

dVBO/dTJ

----

Off-State Current

(VD1=50V)

ID1

----

(VD2=VDM)

ID2=IDM

----

On-State Voltage

(IT=1A)

----

(PW

≤

300 µsec, Duty Cycle

≤

2% (Note 2))

Breakover Current

IBO

----

Holding Current (Note 2)

150

Peak Onstage Surge Current

ITSM

(Measured @ 60Hz, 1 cycle, 600V)

Critical Rate of Rise of Off-State Voltage

dv/dt

2000

(Linear waveform, V

= 0.8 X Rated V

, TJ= +25ºC)

Capacitance

(f=1.0 MHz, 50Vdc bias, 1 Vrms)

----

(f=1.0 MHz, 2Vdc bias, 1 Vrms)

----

Note 1. Allow cooling before test second polarity.

Note 2. Measured under pulse conditions to reduce heating.

Typ

310

0.1

-----

----

Max

365

-----

2.0

5.0

4.0

800

----

Units

%/ºC

µA

V/µs

VOLTAGE-CURRENT CHARACTERISTIC

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