3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27
| Parameter Name | Attribute value |
| Number of terminals | 2 |
| Number of components | 1 |
| state | CONSULT MFR |
| packaging shape | round |
| Package Size | LONG FORM |
| Terminal form | Wire |
| Terminal location | AXIAL |
| Packaging Materials | Plastic/Epoxy |
| structure | single |
| Shell connection | isolation |
| Diode component materials | silicon |
| Diode type | rectifier diode |
| application | GENERAL PURPOSE |
| Phase | 1 |
| Maximum repetitive peak reverse voltage | 1000 V |
| Maximum average forward current | 3 A |
| Maximum non-repetitive peak forward current | 200 A |
| 1N5408G | 1N5400 | 1N5401G | 1N5402G | 1N5404G | 1N5406G | 1N5407G | 1N5400G | |
|---|---|---|---|---|---|---|---|---|
| Description | 3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27 | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27 | 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD | 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD | RECTIFIER DIODE | 3 A, 800 V, SILICON, RECTIFIER DIODE | 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD |
| state | CONSULT MFR | ACTIVE | - | - | - | ACTIVE | ACTIVE | ACTIVE |
| Diode type | rectifier diode | rectifier diode | - | - | - | rectifier diode | RECTIFIER DIODE | rectifier diode |
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