1N5407G datasheet, PDF - EEWORLD Datasheet

1N5407G: Description3 A, 800 V, SILICON, RECTIFIER DIODE; Categorysemiconductor Discrete semiconductor; File Size510KB，2 Pages; ManufacturerTAYCHIPST; Websitehttp://www.taychipst.com

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3 A, 800 V, SILICON, RECTIFIER DIODE

Parameter Name	Attribute value
Number of terminals	2
Number of components	1
Processing package description	LEAD FREE, PLASTIC, CASE 267-05, 2 PIN
Lead-free	Yes
EU RoHS regulations	Yes
state	ACTIVE
packaging shape	ROUND
Package Size	LONG FORM
Terminal form	WIRE
terminal coating	MATTE TIN
Terminal location	AXIAL
Packaging Materials	PLASTIC/EPOXY
structure	SINGLE
Shell connection	ISOLATED
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
application	GENERAL PURPOSE
Phase	1
Maximum repetitive peak reverse voltage	800 V
Maximum average forward current	3 A
Maximum non-repetitive peak forward current	200 A

	1N5407G	1N5400	1N5401G	1N5402G	1N5404G	1N5406G	1N5408G	1N5400G
Description	3 A, 800 V, SILICON, RECTIFIER DIODE	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 100 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD	3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD	RECTIFIER DIODE	3 A, 1000 V, SILICON, RECTIFIER DIODE, DO-27	3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD
state	ACTIVE	ACTIVE	-	-	-	ACTIVE	CONSULT MFR	ACTIVE
Diode type	RECTIFIER DIODE	rectifier diode	-	-	-	rectifier diode	rectifier diode	rectifier diode

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