|
1N5399G |
1N5397G |
1N5398G |
Description |
RECTIFIER DIODE, DO-15 |
1.5 A, 600 V, SILICON, RECTIFIER DIODE, DO-15 |
RECTIFIER DIODE, DO-15 |
Maker |
TAITRON Components |
TAITRON Components |
TAITRON Components |
Reach Compliance Code |
unknow |
unknow |
unknow |
application |
GENERAL PURPOSE |
GENERAL PURPOSE |
GENERAL PURPOSE |
Shell connection |
ISOLATED |
ISOLATED |
ISOLATED |
Configuration |
SINGLE |
SINGLE |
SINGLE |
Diode component materials |
SILICON |
SILICON |
SILICON |
Diode type |
RECTIFIER DIODE |
RECTIFIER DIODE |
RECTIFIER DIODE |
Maximum forward voltage (VF) |
1.1 V |
1.1 V |
1.1 V |
JEDEC-95 code |
DO-15 |
DO-15 |
DO-15 |
JESD-30 code |
O-PALF-W2 |
O-PALF-W2 |
O-PALF-W2 |
Maximum non-repetitive peak forward current |
50 A |
50 A |
50 A |
Number of components |
1 |
1 |
1 |
Phase |
1 |
1 |
1 |
Number of terminals |
2 |
2 |
2 |
Maximum operating temperature |
150 °C |
150 °C |
150 °C |
Minimum operating temperature |
-55 °C |
-55 °C |
-55 °C |
Maximum output current |
1.5 A |
1.5 A |
1.5 A |
Package body material |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
PLASTIC/EPOXY |
Package shape |
ROUND |
ROUND |
ROUND |
Package form |
LONG FORM |
LONG FORM |
LONG FORM |
Maximum repetitive peak reverse voltage |
1000 V |
600 V |
800 V |
Maximum reverse current |
5 µA |
5 µA |
5 µA |
Reverse test voltage |
1000 V |
600 V |
800 V |
surface mount |
NO |
NO |
NO |
Terminal form |
WIRE |
WIRE |
WIRE |
Terminal location |
AXIAL |
AXIAL |
AXIAL |