1N4746A datasheet, PDF - EEWORLD Datasheet

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1N4746A: DescriptionZener diode; CategoryDiscrete semiconductor diode; File Size40KB，2 Pages; ManufacturerYangzhou Yangjie Electronic Technology Co., Ltd.; Websitehttp://www.21yangjie.com/; Environmental Compliance; Yangzhou Yangjie Electronic Technology Co., Ltd. was established on August 2, 2006 with a registered capital of RMB 472 million. In January 2014, the company was listed on the Shenzhen Stock Exchange's Growth Enterprise Market with the stock code 300373. In 2017, the company's operating income was RMB 1.47 billion. The company integrates R&D, production and sales, and is professionally committed to the industrial development of power semiconductor chips and device manufacturing, integrated circuit packaging and testing, etc. The company's main products are various power electronic device chips, power diodes, rectifier bridges, high-power modules, DFN/QFN products, SGT MOS and silicon carbide SBD, silicon carbide JBS, etc. The products are widely used in many fields such as consumer electronics, security, industrial control, automotive electronics, and new energy.

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1N4746A Overview

Zener diode

MULTICOMP - 1N4746A - ZENER 二极管; 1W; 18V; DO-41; FULL REEL

Features

Product Name: Zener diode

Product model: 1N4746A

product features:

Ptot 1.0W

Vz 3.3V-100V

Product Usage:

Stabilizing Voltage

product data:

Zener voltage range Vz at Izt Rated Zener voltage: 18V

Test current Izt Test current: 14mA

Dynamic resistance Maximum dynamic resistance:

Rzjt at Izt: 20Ω

Rzjk at Izk：750Ω

Izk: 0.25mA

Reverse leakage current Maximum reverse leakage current: IR: 5μA

Test voltage Vr ：13.7V

Surge current (at Ta=25℃) IR surge current: 250mA

Maximum regulator current Izm Maximum adjustment current: 50mA

Maximum junction temperature Tj: 175℃

Storage temperature range Tstg: -65~+175℃

Package: DO-41

1N4746A Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Yangzhou Yangjie Electronic Technology Co., Ltd.
package instruction	O-XALF-W2
Reach Compliance Code	compli
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	ZENER DIODE
Maximum dynamic impedance	20 Ω
JEDEC-95 code	DO-41
JESD-30 code	O-XALF-W2
JESD-609 code	e3
Number of components	1
Number of terminals	2
Maximum operating temperature	175 °C
Package body material	UNSPECIFIED
Package shape	ROUND
Package form	LONG FORM
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
polarity	UNIDIRECTIONAL
Maximum power dissipation	1 W
Nominal reference voltage	18 V
surface mount	NO
technology	ZENER
Terminal surface	Tin (Sn)
Terminal form	WIRE
Terminal location	AXIAL
Maximum time at peak reflow temperature	NOT SPECIFIED
Maximum voltage tolerance	5%
Working test current	14 mA

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1N4728A~1N4761A

Zener diode

Features

1.High reliability

2.Very sharp reverse characteristic

3.Low reverse current level

4.Vz-tolerance

Voltage Range

3.3 to 75 Volts

DO-41

1.0(25.4)

MIN.

.107(2.7)

.080(2.0)

DIA.

.205(5.2)

.166(4.2)

Applications

Voltage stabilization

1.0(25.4)

MIN.

Absoluto Maximum Ratings

Tj=25 C

Parameter

Power dissipation

Z-current

Junction temperature

Storage temperature range

Type

.034(.86)

.028(.71)

DIA.

Dimensions in inches and (millimeters)

Test Conditions

amb

*50

Symbol

Tstg

Value

200

-65~+175

Unit

Maximum Thermal Resistance

Tj=25

Parameter

Junction ambient

Test Condltions

I=9.5mm(3/8") T

=constant

Symbol

thJA

Value

100

Unit

K/W

Electrcal Characteristics

Tj=25

Parameter

Forward voltage

Test Conditions

=200mA

Type

Symbol

Min

Typ

Max

1.2

Unit

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