GM71CS4170AR-10 datasheet, PDF

GM71CS4170AR-10: DescriptionFast Page DRAM, 256KX16, 100ns, CMOS, PDSO40,; Categorystorage storage; File Size1MB，22 Pages; ManufacturerLG Semicon Co., Ltd.

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GM71CS4170AR-10 Overview

Fast Page DRAM, 256KX16, 100ns, CMOS, PDSO40,

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	LG Semicon Co., Ltd.
Reach Compliance Code	unknown
access mode	FAST PAGE
Maximum access time	100 ns
Other features	RAS ONLY/CAS BEFORE RAS/HIDDEN/SELF REFRESH
I/O type	COMMON
JESD-30 code	R-PDSO-G40
JESD-609 code	e0
memory density	4194304 bit
Memory IC Type	FAST PAGE DRAM
memory width	16
Number of functions	1
Number of ports	1
Number of terminals	40
word count	262144 words
character code	256000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	256KX16
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TSOP
Encapsulate equivalent code	TSOP40/44,.46,32
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
refresh cycle	1024
reverse pinout	YES
self refresh	YES
Maximum standby current	0.001 A
Maximum slew rate	0.1 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	GULL WING
Terminal pitch	0.8 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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