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2SD1073

Description
Power Bipolar Transistor, 4A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size146KB,2 Pages
ManufacturerFuji Electric Co., Ltd.
Download Datasheet Parametric View All

2SD1073 Overview

Power Bipolar Transistor, 4A I(C), 250V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, SC-46, 3 PIN

2SD1073 Parametric

Parameter NameAttribute value
Parts packaging codeTO-220AB
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Reach Compliance Codeunknow
ECCN codeEAR99
Other featuresHIGH RELIABILITY
Maximum collector current (IC)4 A
Collector-emitter maximum voltage250 V
ConfigurationDARLINGTON
Minimum DC current gain (hFE)1000
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeNPN
Maximum power consumption environment60 W
Maximum power dissipation(Abs)60 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Maximum off time (toff)25000 ns
Maximum opening time (tons)3000 ns
Base Number Matches1
2SD1073
TRIPLE DIFFUSED PLANER TYPE
HIGH POWER DARLINGTON
HIGH VOLTAGE POWER AMPLIFIER
FUJI POWER TRANSISTOR
Outline Drawings
TO-220AB
Features
High D.C. current gain
Low saturation voltage
High reliability
Applications
Audio power amplifiers
Relay & solenoid drivers
Motor controls
General purpose power amplifiers
JEDEC
EIAJ
1 : Base
2 : Collector
3 : Emitter
TO-220AB
SC-46
Equivalent Circuit Schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector current
Base current
Collector power disspation
Operating junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
T
j
T
stg
Ratings
300
250
30
4
0.3
60
+150
-55 to +150
Unit
V
V
V
A
A
W
°C
°C
Electrical characteristics (T
c
=25°C unless otherwise specified)
Item
Collector-Base voltage
Collector-Emitter voltage
Emitter-Base voltage
Collector-Base leakage current
Emitter-Base leakage current
D.C. current gain
Collector-Emitter saturation voltage
Base-Emitter saturation voltage
Symbol
V
CBO
V
CEO
V
EBO
I
CBO
I
EBO
h
FE
V
CE(Sat)
V
BE(Sat)
Test Conditions
I
CBO
= 0.1mA
I
CEO
= 10mA
I
EBO
= 10mA
V
CBO
= 300V
V
EBO
= 30V
I
C
= 2A, V
CE
= 2V
I
C
= 1A, I
B
= 10mA
Min.
300
250
30
Typ.
Max.
Units
V
V
V
mA
mA
V
V
0.1
0.1
1000
1.5
2.0
Thermal characteristics
Item
Thermal resistance
Symbol
R
th(j-c)
Test Conditions
Junction to case
Min.
Typ.
Max.
2.0
Units
°C/W
1
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