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2N3390D75Z

Description
Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,
CategoryDiscrete semiconductor    The transistor   
File Size294KB,7 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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2N3390D75Z Overview

Small Signal Bipolar Transistor, 0.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92,

2N3390D75Z Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
package instructionCYLINDRICAL, O-PBCY-T3
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)0.5 A
Collector-emitter maximum voltage25 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Polarity/channel typeNPN
Maximum power dissipation(Abs)0.2 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
transistor applicationsSWITCHING
Transistor component materialsSILICON
Base Number Matches1
2N3390 / 2N3391 / 2N3391A / 2N3392 / 2N3393
Discrete POWER & Signal
Technologies
2N3390
2N3391
2N3391A
2N3392
2N3393
B
C
TO-92
E
NPN General Purpose Amplifier
This device is designed for use as general purpose amplifiers
and switches requiring collector currents to 300 mA. Sourced
from Process 10. See PN100A for characteristics.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
TA = 25°C unless otherwise noted
Parameter
Collector-Emitter Voltage
Value
25
25
5.0
500
-55 to +150
Units
V
V
V
mA
°
C
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Thermal Characteristics
Symbol
P
D
R
θJC
R
θJA
TA = 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Case
Thermal Resistance, Junction to Ambient
Max
2N3390 / 3391/A / 3392 / 3393
625
5.0
83.3
200
Units
mW
mW/°C
°C/W
°C/W
©
1997 Fairchild Semiconductor Corporation
3390-93, Rev B

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