|
T298N600TOF |
T298N800TOF |
T298N1000TOC |
T298N1000TOF |
Description |
Silicon Controlled Rectifier, 298000mA I(T), 600V V(DRM), |
Silicon Controlled Rectifier, 298000mA I(T), 800V V(DRM), |
Silicon Controlled Rectifier, 298000mA I(T), 1000V V(DRM), |
Silicon Controlled Rectifier, 298000mA I(T), 1000V V(DRM), |
Maker |
Vishay Telefunken (Vishay) |
Vishay Telefunken (Vishay) |
Vishay Telefunken (Vishay) |
Vishay Telefunken (Vishay) |
Reach Compliance Code |
unknown |
unknown |
unknown |
unknown |
Nominal circuit commutation break time |
200 µs |
200 µs |
200 µs |
200 µs |
Critical rise rate of minimum off-state voltage |
1000 V/us |
1000 V/us |
400 V/us |
1000 V/us |
Maximum DC gate trigger current |
150 mA |
150 mA |
150 mA |
150 mA |
Maximum DC gate trigger voltage |
2 V |
2 V |
2 V |
2 V |
Maximum holding current |
200 mA |
200 mA |
200 mA |
200 mA |
Maximum leakage current |
30 mA |
30 mA |
30 mA |
30 mA |
On-state non-repetitive peak current |
4300 A |
4300 A |
4200 A |
4300 A |
Maximum on-state voltage |
2 V |
2 V |
2 V |
2 V |
Maximum on-state current |
298000 A |
298000 A |
298000 A |
298000 A |
Maximum operating temperature |
125 °C |
125 °C |
125 °C |
125 °C |
Minimum operating temperature |
-40 °C |
-40 °C |
-40 °C |
-40 °C |
Off-state repetitive peak voltage |
600 V |
800 V |
1000 V |
1000 V |
surface mount |
NO |
NO |
NO |
NO |
Trigger device type |
SCR |
SCR |
SCR |
SCR |