2N6758 datasheet, PDF - EEWORLD Datasheet

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2N6758: DescriptionPower Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,; CategoryDiscrete semiconductor The transistor; File Size147KB，7 Pages; ManufacturerInfineon; Websitehttp://www.infineon.com/

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2N6758 Overview

Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,

2N6758 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Reach Compliance Code	compli
ECCN code	EAR99
Other features	AVALANCHE RATED
Avalanche Energy Efficiency Rating (Eas)	54 mJ
Shell connection	DRAIN
Configuration	SINGLE
Minimum drain-source breakdown voltage	200 V
Maximum drain current (Abs) (ID)	9 A
Maximum drain current (ID)	9 A
Maximum drain-source on-resistance	0.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA
JESD-30 code	O-MBFM-P2
JESD-609 code	e0
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Minimum operating temperature	-55 °C
Package body material	METAL
Package shape	ROUND
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	N-CHANNEL
Maximum power dissipation(Abs)	75 W
Maximum pulsed drain current (IDM)	36 A
Certification status	Not Qualified
Guideline	MILITARY STANDARD (USA)
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	PIN/PEG
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Base Number Matches	1

2N6758 Related Products

	2N6758	IRF230	IRF230PBF
Description	Power Field-Effect Transistor, 9A I(D), 200V, 0.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA,	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN	Power Field-Effect Transistor, 9A I(D), 200V, 0.49ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-204AA, HERMETIC SEALED, MODIFIED TO-3, 2 PIN
Is it Rohs certified?	incompatible	incompatible	conform to
Reach Compliance Code	compli	unknown	compliant
Avalanche Energy Efficiency Rating (Eas)	54 mJ	54 mJ	54 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	200 V	200 V	200 V
Maximum drain current (ID)	9 A	9 A	9 A
Maximum drain-source on-resistance	0.4 Ω	0.49 Ω	0.49 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-204AA	TO-204AA	TO-204AA
JESD-30 code	O-MBFM-P2	O-MBFM-P2	O-MBFM-P2
Number of components	1	1	1
Number of terminals	2	2	2
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	METAL	METAL	METAL
Package shape	ROUND	ROUND	ROUND
Package form	FLANGE MOUNT	FLANGE MOUNT	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	36 A	36 A	36 A
surface mount	NO	NO	NO
Terminal form	PIN/PEG	PIN/PEG	PIN/PEG
Terminal location	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
ECCN code	EAR99	EAR99	-
Maximum drain current (Abs) (ID)	9 A	9 A	-
JESD-609 code	e0	e0	-
Maximum power dissipation(Abs)	75 W	75 W	-
Certification status	Not Qualified	Not Qualified	-
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	-
Maker	-	Infineon	Infineon
package instruction	-	TO-3, 2 PIN	FLANGE MOUNT, O-MBFM-P2

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