Power Bipolar Transistor, 1A I(C), 300V V(BR)CEO, 1-Element, NPN, Silicon, TO-71, Metal, 6 Pin,
Parameter Name | Attribute value |
Is it lead-free? | Contains lead |
Is it Rohs certified? | incompatible |
Reach Compliance Code | unknow |
ECCN code | EAR99 |
Shell connection | COLLECTOR |
Maximum collector current (IC) | 1 A |
Collector-emitter maximum voltage | 300 V |
Configuration | SINGLE |
Minimum DC current gain (hFE) | 25 |
JEDEC-95 code | TO-71 |
JESD-30 code | O-MBCY-W6 |
Number of components | 1 |
Number of terminals | 6 |
Maximum operating temperature | 200 °C |
Package body material | METAL |
Package shape | ROUND |
Package form | CYLINDRICAL |
Peak Reflow Temperature (Celsius) | NOT SPECIFIED |
Polarity/channel type | NPN |
Maximum power dissipation(Abs) | 20 W |
Certification status | Not Qualified |
surface mount | NO |
Terminal form | WIRE |
Terminal location | BOTTOM |
Maximum time at peak reflow temperature | NOT SPECIFIED |
transistor applications | SWITCHING |
Transistor component materials | SILICON |
Nominal transition frequency (fT) | 20 MHz |
Base Number Matches | 1 |