DATA SHEET
µ
PC2747TB,
µ
PC2748TB
3 V, SUPER MINIMOLD SILICON MMIC
AMPLIFIER FOR MOBILE COMMUNICATIONS
BIPOLAR ANALOG INTEGRATED CIRCUITS
DESCRIPTION
The
µ
PC2747TB,
µ
PC2748TB are silicon monolithic integrated circuits designed as amplifier for mobile
communications. These ICs are packaged in super minimold package which is smaller than conventional minimold.
These ICs are manufactured using our 20 GHz f
T
NESAT lll silicon bipolar process. This process uses silicon
nitride passivation film and gold electrodes. These materials can protect chip surface from external pollution and
prevent corrosion/migration. Thus, these ICs have excellent performance, uniformity and reliability.
FEATURES
• Supply voltage
• Noise figure
• Power gain
• Operating frequency
• Isolation
: V
CC
= 2.7 to 3.3 V
:
µ
PC2747TB ; NF = 3.3 dB TYP. @ f = 900 MHz
µ
PC2748TB ; NF = 2.8 dB TYP. @ f = 900 MHz
:
µ
PC2747TB ; G
P
= 12 dB TYP. @ f = 900 MHz
µ
PC2748TB ; G
P
= 19 dB TYP. @ f = 900 MHz
:
µ
PC2747TB ; DC to 1.8 GHz
µ
PC2748TB ; 0.2 to 1.5 GHz
:
µ
PC2747TB ; ISL = 40 dB TYP. @ f = 900 MHz
µ
PC2748TB ; ISL = 40 dB TYP. @ f = 900 MHz
• High-density surface mounting : 6-pin super minimold package (2.0
×
1.25
×
0.9 mm)
APPLICATION
• Buffer amplifiers for mobile telephones, etc. (PDC800M, GSM)
ORDERING INFORMATION
Part Number
Package
6-pin super minimold
Marking
C1S
C1T
Supplying Form
•
Embossed tape 8 mm wide
•
1, 2, 3 pins face the perforation side of the tape
•
Qty 3 kpcs/reel
µ
PC2747TB-E3
µ
PC2748TB-E3
Remark
To order evaluation samples, contact your nearby sales office.
Part number for sample order:
µ
PC2747TB,
µ
PC2748TB
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10201EJ01V0DS (1st edition)
(Previous No. P13444EJ3V0DS00)
Date Published December 2002 CP(K)
Printed in Japan
The mark
•
shows major revised points.
©
NEC Compound Semiconductor Devices 1998, 2002
µ
PC2747TB,
µ
PC2748TB
PIN CONNECTIONS
(Top View)
(Bottom View)
4
5
6
4
5
6
3
2
1
Pin No.
1
Pin Name
INPUT
GND
GND
OUTPUT
GND
V
CC
C1S
3
2
1
2
3
4
5
Marking is an example of
µ
PC2747TB
6
PRODUCT LINE-UP (T
A
= +25°C, V
CC
= 3.0 V, Z
S
= Z
L
=50
Ω
)
°
Part No.
f
u
(GHz)
2.7
P
O (sat)
(dBm)
−1.0
G
P
(dB)
12
NF
(dB)
6.0
I
CC
(mA)
7.5
Package
6-pin minimold
6-pin super minimold
1.5
0
19
4.0
7.5
6-pin minimold
6-pin super minimold
1.8
−7.0
12
3.3
5.0
6-pin minimold
6-pin super minimold
1.5
−3.5
19
2.8
6.0
6-pin minimold
6-pin super minimold
2.9
−6.0
16
4.0
6.0
6-pin minimold
6-pin super minimold
C1U
C1T
C1S
C1R
Marking
C1Q
µ
PC2745T
µ
PC2745TB
µ
PC2746T
µ
PC2746TB
µ
PC2747T
µ
PC2747TB
µ
PC2748T
µ
PC2748TB
µ
PC2749T
µ
PC2749TB
Remark
Typical performance. Please refer to
ELECTRICAL CHARACTERISTICS
in detail.
Caution The package size distinguishes between minimold and super minimold.
SYSTEM APPLICATION EXAMPLE
EXAMPLE OF DIGITAL CELLULER TELEPHONE
RX
DEMOD.
I
Q
PSC+PLL
SW
PLL
I
0˚
TX
PA
φ
90˚
Q
:
µ
PC2747TB,
µ
PC2748TB applicable
2
Data Sheet PU10201EJ01V0DS
µ
PC2747TB,
µ
PC2748TB
PIN EXPLANATION
Pin
No.
Pin
Name
Applied
Voltage
(V)
−
Pin
Voltage
Note
(V)
0.80
Function and Applications
Internal Equivalent Circuit
1
INPUT
0.80
Signal input pin.
A internal matching circuit, configured with
resistors, enables 50
Ω
connection over a
wide band.
This pin must be coupled to signal source
with capacitor for DC cut.
Ground pin.
This pin should be connected to system
ground with minimum inductance. Ground
pattern on the board should be formed as
wide as possible. All the ground pins must
be connected together with wide ground
pattern to decrease impedance difference.
Signal output pin.
A internal matching circuit, configured with
resistors, enables 50
Ω
connection over a
wide band.
This pin must be coupled to next stage
with capacitor for DC cut.
Power supply pin.
This pin should be externally equipped
with bypass capacity to minimize ground
impedance.
6
2
3
5
GND
0
−
4
1
*
4
OUTPUT
−
2.79
3
2
5
2.72
6
V
CC
2.7 to 3.3
−
The above diagram is for the
µ
PC2747TB.
The resistor marked with an asterisk
does not exist in the
µ
PC2748TB.
Note
Pin voltage is measured at V
CC
= 3.0 V. Above:
µ
PC2747TB, Below:
µ
PC2748TB
Data Sheet PU10201EJ01V0DS
3
µ
PC2747TB,
µ
PC2748TB
ABSOLUTE MAXIMUM RATINGS
Parameter
Supply Voltage
Circuit Current
Power Dissipation
Operating Ambient Temperature
Storage Temperature
Input Power
Symbol
V
CC
I
CC
P
D
T
A
T
stg
P
in
T
A
= +25°C
T
A
= +25°C
T
A
= +25°C
T
A
= +85°C
Note
Conditions
Ratings
4.0
15
270
−40
to +85
−55
to +150
0
Unit
V
mA
mW
°C
°C
dBm
Note
Mounted on double-sided copper-clad 50
×
50
×
1.6 mm epoxy glass PWB
RECOMMENDED OPERATING RENGE
Parameter
Supply Voltage
Symbol
V
CC
MIN.
2.7
TYP.
3.0
MAX.
3.3
Unit
V
ELECTRICAL CHARACTERISTICS
(T
A
= +25°C, V
CC
= 3.0 V, Z
S
= Z
L
= 50
Ω
, unless otherwise specified)
°
Parameter
Symbol
Test Conditions
µ
PC2747TB
µ
PC2748TB
Unit
MIN. TYP. MAX. MIN. TYP. MAX.
Circuit Current
Power Gain
Noise Figure
Upper Limit Operating Frequency
I
CC
G
P
NF
f
u
No Signal
f = 900 MHz
f = 900 MHz
3 dB down below from gain at
f = 0.9 GHz
3 dB down below from gain at
f = 0.9 GHz
f = 900 MHz
f = 900 MHz
f = 900 MHz
f = 900 MHz, P
in
= –8 dBm
3.8
9
–
1.5
5.0
12
3.3
1.8
7.0
14
4.5
–
4.5
16
–
1.2
6.0
19
2.8
1.5
8.0
21
4.0
–
mA
dB
dB
GHz
Lower Limit Operating Frequency
f
L
–
–
–
–
0.2
0.4
GHz
Isolation
Input Return Loss
Output Return Loss
Saturated Output Power
ISL
RL
in
RL
out
P
O (sat)
35
11
7
–9.5
40
14
10
–7.0
–
–
–
–
35
8.5
5.5
–6.0
40
11.5
8.5
–3.5
–
–
–
–
dB
dB
dB
dBm
4
Data Sheet PU10201EJ01V0DS
µ
PC2747TB,
µ
PC2748TB
STANDARD CHARACTERISTICS FOR REFERENCE (T
A
= +25°C, Z
S
= Z
L
=50
Ω
)
°
Parameter
Symbol
Test Conditions
Reference
Unit
µ
PC2747TB
µ
PC2748TB
Circuit Current
Power Gain
Noise Figure
Upper Limit Operating Frequency
I
CC
G
P
NF
f
u
V
CC
= 1.8 V, No signal
V
CC
= 1.8 V, f = 900 MHz
V
CC
= 1.8 V, f = 900 MHz
V
CC
= 1.8 V,
3 dB down below from gain at f = 0.9 GHz
V
CC
= 1.8 V,
3 dB down below from gain at f = 0.9 GHz
V
CC
= 1.8 V, f = 900 MHz
V
CC
= 1.8 V, f = 900 MHz
V
CC
= 1.8 V, f = 900 MHz
V
CC
= 1.8 V, f = 900 MHz, P
in
=
−8
dBm
V
CC
= 3.0 V, P
out
=
−20
dBm,
f
1
= 900 MHz, f
2
= 902 MHz
V
CC
= 1.8 V, P
out
=
−20
dBm,
f
1
= 900 MHz, f
2
= 902 MHz
3.0
5.5
5.2
1.8
−
3.5
11.5
4.5
1.5
mA
dB
dB
GHz
Lower Limit Operating Frequency
f
L
0.2
GHz
Isolation
Input Return Loss
Output Return Loss
Saturated Output Power
3rd Order Intermodulation
Distortion
ISL
RL
in
RL
out
P
O (sat)
IM
3
34
11
13
−13.7
−34
−20
34
10
12
−10.0
−38
−28
dB
dB
dB
dBm
dBc
Data Sheet PU10201EJ01V0DS
5
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