U632H64DC45 datasheet, PDF - EEWORLD Datasheet

U632H64DC45: DescriptionNon-Volatile SRAM, 8KX8, 45ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size344KB，14 Pages; ManufacturerZentrum Mikroelektronik Dresden AG (IDT)

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U632H64DC45 Overview

Non-Volatile SRAM, 8KX8, 45ns, CMOS, PDIP28, 0.300 INCH, PLASTIC, DIP-28

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	incompatible
Maker	Zentrum Mikroelektronik Dresden AG (IDT)
Parts packaging code	DIP
package instruction	DIP, DIP28,.3
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	45 ns
JESD-30 code	R-PDIP-T28
JESD-609 code	e0
length	34.7 mm
memory density	65536 bit
Memory IC Type	NON-VOLATILE SRAM
memory width	8
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Output characteristics	3-STATE
Exportable	YES
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Encapsulate equivalent code	DIP28,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
power supply	5 V
Certification status	Not Qualified
Maximum seat height	5.1 mm
Maximum standby current	0.003 A
Maximum slew rate	0.075 mA
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	TIN LEAD
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
width	7.62 mm

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