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MUR810

Description
Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon
CategoryDiscrete semiconductor    diode   
File Size31KB,2 Pages
ManufacturerHarris
Websitehttp://www.harris.com/
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MUR810 Overview

Rectifier Diode, Avalanche, 1 Phase, 1 Element, 8A, 100V V(RRM), Silicon

MUR810 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerHarris
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresFREEWHEELING DIODE
applicationULTRA FAST SOFT RECOVERY
Shell connectionCATHODE
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
Maximum forward voltage (VF)0.975 V
JESD-30 codeR-PSFM-T2
JESD-609 codee0
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum operating temperature175 °C
Minimum operating temperature-65 °C
Maximum output current8 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum power dissipation50 W
Certification statusNot Qualified
Maximum repetitive peak reverse voltage100 V
Maximum reverse current100 µA
Maximum reverse recovery time0.03 µs
surface mountNO
technologyAVALANCHE
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED

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Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
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