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SGH40N60UFD

Description
Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN
CategoryDiscrete semiconductor    The transistor   
File Size228KB,7 Pages
ManufacturerSAMSUNG
Websitehttp://www.samsung.com/Products/Semiconductor/
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SGH40N60UFD Overview

Insulated Gate Bipolar Transistor, 40A I(C), 600V V(BR)CES, N-Channel, TO-3P, 3 PIN

SGH40N60UFD Parametric

Parameter NameAttribute value
MakerSAMSUNG
Parts packaging codeTO-3P
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts2
Reach Compliance Codecompliant
Other featuresHIGH SPEED SWITCHING
Maximum collector current (IC)40 A
Collector-emitter maximum voltage600 V
ConfigurationSINGLE WITH BUILT-IN DIODE
Maximum landing time (tf)280 ns
Gate emitter threshold voltage maximum7.5 V
Gate-emitter maximum voltage20 V
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)160 W
Certification statusNot Qualified
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
transistor applicationsMOTOR CONTROL
Transistor component materialsSILICON
Nominal off time (toff)118 ns
Nominal on time (ton)32 ns
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