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STQ-3016

Description
Modulator, Quadraphase, 2500MHz Min, 4000MHz Max, 5 X 6.4 MM, 1 MM HEIGHT, TSSOP-16
CategoryWireless rf/communication    Radio frequency and microwave   
File Size262KB,8 Pages
ManufacturerQorvo
Websitehttps://www.qorvo.com
Download Datasheet Parametric View All

STQ-3016 Overview

Modulator, Quadraphase, 2500MHz Min, 4000MHz Max, 5 X 6.4 MM, 1 MM HEIGHT, TSSOP-16

STQ-3016 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerQorvo
Reach Compliance Codeunknown
Characteristic impedance50 Ω
structureCOMPONENT
Maximum input power (CW)10 dBm
JESD-609 codee0
modulation technologyQUADRAPHASE
Maximum operating frequency4000 MHz
Minimum operating frequency2500 MHz
Maximum operating temperature85 °C
Minimum operating temperature-40 °C
RF/Microwave Device TypesMODULATOR
Terminal surfaceTin/Lead (Sn/Pb)

STQ-3016 Preview

STQ-3016(Z)
2500MHz to
4000MHz
Direct Quadra-
ture Modulator
Preliminary
STQ-3016(Z)
2500MHz to 4000MHz DIRECT QUADRATURE
MODULATOR
RFMD Green, RoHS Compliant, Pb-Free (Z Part Number)
Package: TSSOP, 16-Pin, 5.0mmx6.4mmx1.0mm
NOT FOR NEW DESIGNSNOT FOR NEW DESIGNSNOT FOR NEW DESIGNS
Product Description
RFMD’s STQ-3016 is a direct quadrature modulator targeted for use in a wide range
of communications systems. This device features a wide 2500MHz to 4000MHz
operating frequency band, excellent carrier and sideband suppression, and a low
broadband noise floor.
The STQ-3016 uses silicon germanium (SiGe) device technology and delivers a typi-
cal output power of -12dBm with greater than 50dB IM3 suppression. The device is
packaged in an industry standard 16-pin TSSOP with exposed paddle for superb RF
and thermal ground.
Optimum Technology
Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
Features
Excellent Carrier Feedthrough,
-40dBm
Wide Baseband Input, DC to
500MHz
Superb Phase Accuracy and
Amplitude Balance, ±4°/±0.2dB
No External IF Filter Required
Very Low Noise Floor, -
153dBm/Hz
Low LO Drive Requirement,
-6dBm
Single +5V Supply with Digital
Shut-Down
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
RF MEMS
NE
W
Parameter
RF Output: T
A
=25°C
RF Frequency Range
Output Power
RF Port Return Loss
Output P1dB
Carrier Feedthrough
Sideband Suppression
IM3 Suppression
Unit
MHz
dBm
dB
dBm
dB
dBm
dB
2500MHz to 3000MHz
Min.
Typ.
Max.
3000
-10
DE
SI
GN
3000MHz to 4000MHz
Min.
Typ.
Max.
3000
-15
-1
4000
-10
2500
-14
-1
30
50
-11
15
-12
10
+2
-42
33
55
-153
FO
R
+2
-42
36
55
-154
-32
28
50
Broadband Noise Floor
dBm/Hz
Quadrature Phase Error
°C
-4.0
±2.0
+4.0
-4.0
±2.5
+4.0
I/Q Amplitude Balance
dB
-0.2
±0.1
+0.2
-0.2
±0.1
+0.2
V
+4.75
+5.00
+5.25
+4.75
+5.00
+5.25
Supply Voltage (V
CC
)
Supply Current
mA
80
88
80
88
Device Thermal Resistance
°C/W
25
25
Junction to case
Test Conditions (for all product specification tables unless otherwise noted): V
CC
(pins 2, 10, 15)=+5V, T
A
=+25°C, Baseband Input (Pins 1, 8, 9, 16)=
1.9V DC bias, 200kHz frequency, 300mV
P-P
differential drive, I and Q signals in quadrature, LO Input (Pins 4, 5)=-6dBm @ 3500MHz
NO
T
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trade-
mark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2006, RF Micro Devices, Inc.
DS101122
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
SN
OT
Applications
2.5GHz and 3.5GHz Fixed Wire-
less Communication Systems
GMSK, QPSK, QAM, SSB Modula-
tors
Condition
Matched to 50 (Refer to sche-
matics on page 6 and 7)
-32
Two-tone baseband input @
600mV
P-P
differential per tone
Baseband inputs tied to 1.9V
DC
, -
20MHz offset from carrier
1 of 8
STQ-3016(Z)
Absolute Maximum Ratings
Parameter
Supply Voltage (VCC)
LO, Input (LOP, LON, RFP, RFN)
Baseband Min Input Voltage (BBIP,
BBIN, BBQP, BBQN)
Baseband Max Input Voltage (BBIP,
BBIN, BBQP, BBQN)
Operating Temperature
Storage Temperature
Preliminary
Rating
6.0
+10
0
3
-40 to +85
-65 to +150
Unit
VCC
dBm
VDC
VDC
°C
°C
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical perfor-
mance or functional operation of the device under Absolute Maximum Rating condi-
tions is not implied.
RoHS status based on EUDirective2002/95/EC (at time of this document revision).
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended appli-
cation circuitry and specifications at any time without prior notice.
Parameter
Product Specifications
Baseband Frequency Input
Baseband Input Resistance
Baseband Input Capacitance
Min.
DC
Specification
Typ.
Max.
500
Unit
MHz
k
pF
4.4
0.5
2500
-9
Product Specifications
Useable LO Frequency
LO Drive Level
LO Port Return Loss
-6
16
Product Specifications
NO
T
2 of 8
FO
R
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NE
W
Shut-Down Attenuation
60
dB
Shut-Down Pin Resistance
6.1
k
at 1MHz
Shut-Down Pin Capacitance
0.7
pF
at 1MHz
V
Shut-Down disabled (normal operation)
Shut-Down Control Voltage Thresh-
4.0
V
CC
olds
Shut-Down Control Voltage Thresh-
0.0
1.0
V
Shut-Down enabled
olds
Shut-Down Settling Time
<450
ns
Test Conditions: (for all product specifications unless otherwise noted) V
CC
(pins 2, 10, 15): +5V, T
A
=+25°C, Baseband Input (pins 1, 8, 9, 16): 1.9V DC
bias, 200kHz frequency; 300mVp-p per pin=600mVp-p differential drive, I and Q signals in quadrature, LO Input (pins 4, 5)=-6dBm at 3500MHz
DE
SI
GN
4000
-3
MHz
dBm
dB
SN
OT
Condition
Operation of this device beyond any one of these limits may cause permanent dam-
age. For reliable continuous operation, the device voltage and current must not
exceed the maximum operating values specified in the table on page one.
Baseband Modulation Input: T
A
=25°C
-3dB bandwidth, baseband inputs terminated in
50
per pin
per pin
LO Input: T
A
=25°C
Matched to 50 (refer to schematics)
Miscellaneous: T
A
=25°C
DS101122
Preliminary
2500MHz to 3000MHz Typical Device Performance
STQ-3016(Z)
NO
T
DS101122
FO
R
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NE
W
DE
SI
GN
3 of 8
SN
OT
STQ-3016(Z)
3000MHz to 4000MHz Typical Device Performance
Preliminary
NO
T
4 of 8
FO
R
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
NE
W
DE
SI
GN
DS101122
SN
OT
Preliminary
Pin
1
2, 10,
15
3, 6,
11, 14
4
5
7
8
9
12
13
16
Function
BBQP
VCC
VEE
LOP
LON
SD
BBIP
BBIN
RFN
RFP
BBQN
Description
STQ-3016(Z)
Q-channel baseband input, positive terminal. Nominal DC voltage is 1.9V (biased internally).
Positive supply (+5V).
Ground.
Local oscillator input, positive terminal. Nominal DC voltage is 2.0V. Input should be AC-coupled.
Local oscillator input, negative terminal. Nominal DC voltage is 2.0V. Input should be AC-coupled.
Shut-down control. Logic high=normal operation; logic low=shut-down enabled.
I-channel baseband input, positive terminal. Nominal DC bias voltage is 1.9V (biased internally).
RF output, negative terminal. Nominal DC voltage is 2.4V. Output should be AC-coupled.
RF output, positive terminal. Nominal DC voltage is 2.4V. Output should be AC-coupled.
Q-channel baseband input, negative terminal. Nominal DC bias voltage is 1.9V (biased internally).
0.049
(1.25)
0.012
(0.30)
0.014
(0.35)
0.118
(3.0)
NE
W
FO
R
0.272 (6.9)
all units are in inches (mm)
- Indicates metalization
- vias connect pad to underlying ground plane
Package Drawing
0.193 (4.9)
0.207 (5.25)
0.004 (0.1)
0.008 (0.2)
0.018 (0.45)
0.030 (0.75)
Dimensions in inches (millimeters)
Refer to drawing posted at www.rfmd.com for tolerances.
NO
T
STQ
3016(Z)
2016
(Z)
LO ID
T
Part #
N TES:
O
1. PAC
KAG BO Y SIZES EXC
E
D
LUD M LD
E O
FLASH PR TRU
O
SIO S O G
N
R ATE BU S.
RR
2. TO
LER
ANC ±0.1M UN
E
M LESS O ERW
TH
ISE
SPEC
IFIED
.
3. C PLANAR
O
ITY: 0.1M
M
4. C N O
O TR LLING D EN
IM SIO IS M
N
ILLIM
ETER
,
CO
NVER
TED INC D ENSIO S AR N T
H IM
N
E O
N ESSAR
EC
ILY EXAC
T.
5. FO
LLO ED FR M JED M -153.
W
O
EC O
DS101122
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or sales-support@rfmd.com.
DE
SI
GN
0.118
(3.0)
0.024
(0.63)
0.010
(0.25) via
0.028
(0.7)
0.035
(0.9)
EXPO
SED
THERM
AL
PAD ZO
NE
.
0.118 (3.0) SQ
0.252 (6.4)
0.169 (4.3)
0.177 (4.5)
0.031 (0.8)
0.041 (1.05)
0.0
0.006 (0.15)
0.026 (.65)
0.007 (0.19)
0.012 (0.30)
Suggested Pad Layout
SN
OT
5 of 8
I-channel baseband input, negative terminal. Nominal DC bias voltage is 1.9V (biased internally).

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