RN2317 datasheet, PDF - EEWORLD Datasheet

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RN2317: DescriptionTRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN, BIP General Purpose Small Signal; CategoryDiscrete semiconductor The transistor; File Size436KB，8 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/; Environmental Compliance

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RN2317 Overview

TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN, BIP General Purpose Small Signal

RN2317 Parametric

Parameter Name	Attribute value
Is it lead-free?	Contains lead
Is it Rohs certified?	conform to
Maker	Toshiba Semiconductor
Parts packaging code	SC-70
package instruction	SC-70, 3 PIN
Contacts	3
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 0.47
Maximum collector current (IC)	0.1 A
Collector-based maximum capacity	6 pF
Collector-emitter maximum voltage	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30
JESD-30 code	R-PDSO-G3
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	PNP
Maximum power dissipation(Abs)	0.1 W
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	SWITCHING
Transistor component materials	SILICON
Nominal transition frequency (fT)	200 MHz
VCEsat-Max	0.3 V

RN2317 Preview

RN2314~RN2318

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)

RN2314,RN2315,RN2316,RN2317,RN2318

Switching, Inverter Circuit, Interface Circuit

And Driver Circuit Applications

With built-in bias resistors

Simplify circuit design

Reduce a quantity of parts and manufacturing process

Complementary to RN1314~RN1318

Unit: mm

Equivalent Circuit and Bias Resistor Values

Type No.

RN2314

RN2315

RN2316

RN2317

RN2318

R

1

(kΩ)

1

2.2

4.7

10

47

R

2

(kΩ)

10

4.7

10

Maximum Ratings

(Ta = 25°C)

°

Characteristic

Collector-base voltage

Collector-emitter voltage

RN2314~2318

RN2314

RN2315

Emitter-base voltage

RN2316

RN2317

RN2318

Collector current

Collector power dissipation

Junction temperature

Storage temperature range

RN2314~2318

I

C

P

C

T

j

T

stg

V

EBO

Symbol

V

CBO

V

CEO

Rating

−50

−5

−6

−7

−15

−25

−100

100

150

−55~150

JEDEC

EIAJ

TOSHIBA

Weight: 0.006g

―

SC-70

2-2E1A

Unit

V

mA

mW

°C

1

2001-06-07

RN2314~RN2318

Electrical Characteristics

(Ta = 25°C)

°

Characteristic

Collector cut-off current

RN2314~2318

RN2314

RN2315

Emitter cut-off current

RN2316

RN2317

RN2318

DC current gain

Collector-emitter

saturation voltage

RN2314~16, 18

RN2317

RN2314~2318

RN2314

RN2315

Input voltage (ON)

RN2316

RN2317

RN2318

RN2314

RN2315

Input voltage (OFF)

RN2316

RN2317

RN2318

Translation frequency

Collector output

capacitance

RN2314~2318

RN2314

RN2315

Input resistor

RN2316

RN2317

RN2318

RN2314

RN2315

Resistor ratio

RN2316

RN2317

RN2318

R

1

/R

2

R

1

f

T

C

ob

V

I (OFF)

V

I (ON)

h

FE

V

CE (sat)

I

EBO

Symbol

I

CBO

I

CEO

Test

Circuit

―

V

CE

=

−10V,

I

C

=

−5mA

V

CB

=

−10V,

I

E

= 0,

f = 1MHz

V

CE

=

−5V,

I

C

=

−0.1mA

V

CE

=

−0.2V,

I

C

=

−5mA

Test Condition

V

CB

=−50V, I

E

= 0

V

CE

=

−50V,

I

B

= 0

V

EB

=

−5V,

I

C

= 0

V

EB

=

−6V,

I

C

= 0

V

EB

=

−7V,

I

C

= 0

V

EB

=

−15V,

I

C

= 0

V

EB

=

−25V,

I

C

= 0

V

CE

=

−5V,

I

C

=

−10mA

I

C

=

−5mA,

I

B

=

−0.25mA

Min

―

−0.35

−0.37

−0.36

−0.78

−0.33

50

30

―

−0.5

−0.6

−0.7

−1.5

−2.5

−0.3

−0.5

―

0.7

1.54

3.29

7.0

32.9

―

Typ.

―

−0.1

―

200

3.0

1.0

2.2

4.7

10.0

47.0

0.1

0.22

0.47

2.13

4.7

Max

−100

−500

−0.65

−0.71

−0.68

−1.46

−0.63

―

−0.3

−2.0

−2.5

−3.5

−10.0

−0.9

−1.0

−1.1

−3.0

−5.7

―

6.0

1.3

2.86

6.11

13.0

61.1

―

kΩ

MHz

pF

V

―

V

mA

Unit

nA

2

2001-06-07

RN2314~RN2318

3

2001-06-07

RN2314~RN2318

4

2001-06-07

RN2314~RN2318

5

2001-06-07

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RN2317 Related Products

	RN2317	RN2318
Description	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN, BIP General Purpose Small Signal	TRANSISTOR 100 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, SC-70, 3 PIN, BIP General Purpose Small Signal
Is it lead-free?	Contains lead	Contains lead
Is it Rohs certified?	conform to	conform to
Maker	Toshiba Semiconductor	Toshiba Semiconductor
Parts packaging code	SC-70	SC-70
package instruction	SC-70, 3 PIN	SC-70, 3 PIN
Contacts	3	3
Reach Compliance Code	unknown	unknown
ECCN code	EAR99	EAR99
Other features	BUILT-IN RESISTOR RATIO IS 0.47	BUILT-IN RESISTOR RATIO IS 0.21
Maximum collector current (IC)	0.1 A	0.1 A
Collector-based maximum capacity	6 pF	6 pF
Collector-emitter maximum voltage	50 V	50 V
Configuration	SINGLE WITH BUILT-IN RESISTOR	SINGLE WITH BUILT-IN RESISTOR
Minimum DC current gain (hFE)	30	50
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	NOT SPECIFIED	NOT SPECIFIED
Polarity/channel type	PNP	PNP
Maximum power dissipation(Abs)	0.1 W	0.1 W
Certification status	Not Qualified	Not Qualified
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED
transistor applications	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	200 MHz	200 MHz
VCEsat-Max	0.3 V	0.3 V

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