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Datasheet> All Categories > Discrete semiconductor> The transistor> TIP34C
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TIP34C

Description
Power Bipolar Transistor,
CategoryDiscrete semiconductor    The transistor   
File Size332KB，4 Pages
ManufacturerCDIL[Continental Device India Pvt. Ltd.]
Environmental Compliance
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TIP34C Overview

Power Bipolar Transistor,

TIP34C Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerCDIL[Continental Device India Pvt. Ltd.]
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codecompliant
Maximum collector current (IC)10 A
Collector-emitter maximum voltage100 V
ConfigurationSINGLE
Minimum DC current gain (hFE)20
JESD-30 codeR-PSFM-T3
Number of components1
Number of terminals3
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
surface mountNO
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)3 MHz

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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
HIGH POWER TRANSISTORS
TIP33, A, B, C NPN
TIP34, A, B, C PNP
TO- 3PN Non Isolated
Plastic Package
For General Purpose Power Amplifier and Switching Applications.
ABSOLUTE MAXIMUM RATINGS
DESCRIPTION
Collector Emitter Voltage
Collector Base Voltage
Emitter Base Voltage
Collector Current Continuous
Collector Current Peak
Base Current Continuous
Total Power Dissipation at Tc=25ºC
Derate Above 25ºC
Operating and Storage Junction
Temperature Range
SYMBOL
V
CEO
V
CBO
V
EBO
I
C
*I
CM
I
B
P
D
T
j,
T
stg
TIP33
TIP34
40
40
TIP33A
TIP34A
60
60
5.0
10
15
3.0
80
0.64
- 65 to +150
TIP33B
TIP34B
80
80
TIP33C
TIP34C
100
100
UNIT
V
V
V
A
A
A
W
W/ºC
ºC
*Pulse test: Pulse width = 10ms , Duty cycle <10%
THERMAL CHARACTERISTICS
R
th (j-c)
Thermal Resistance, Junction to Case
R
th (j-a)
junction to Free Air Thermal Resistance
ELECTRICAL CHARACTERISTICS (T
c
=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
**V
CEO (sus)
I
C
=30mA, I
B
=0
Collector Emitter Sustaining Voltage
TIP33/TIP34
TIP33A/TIP34A
TIP33B/TIP34B
TIP33C/TIP34C
I
CEO
V
CE
=30V, I
B
=0
Collector Emitter Cut Off Current
TIP33/A, TIP34/A
1.56
35.7
MIN
40
60
80
100
0.7
0.7
0.4
1.0
40
20
100
1.0
4.0
1.6
3.0
TYP
MAX
ºC/W
ºC/W
UNIT
V
V
V
V
mA
mA
mA
mA
Collector Emitter Cut Off Current
Emitter Base Cut Off Current
DC Current Gain
Collector Emitter Saturation Voltage
Base Emitter On Voltage
I
CES
I
EBO
**h
FE
**V
CE (sat)
**V
BE (on)
V
CE
=60V, I
B
=0
TIP33B/C, TIP34B/C
V
CE
=Rated V
CEO
, V
EB
=0
V
EB
=5V, I
C
=0
I
C
=1A, V
CE
=4V
I
C
=3A, V
CE
=4V
I
C
=3A, I
B
=0.3A
I
C
=10A, I
B
=2.5A
I
C
=3A, V
CE
=4V
I
C
=10A, V
CE
=4V
V
V
V
V
**Pulse test: Pulse width 300µs, Duty cycle <2%
µ
TIP33_34Rev110706E
Continental Device India Limited
Data Sheet
Page 1 of 4

TIP34C Related Products

TIP34C TIP33A TIP34 TIP34A
Description Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor, Power Bipolar Transistor,
Is it Rohs certified? conform to conform to conform to conform to
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code compliant compliant compliant compliant
Maximum collector current (IC) 10 A 10 A 10 A 10 A
Collector-emitter maximum voltage 100 V 60 V 40 V 60 V
Configuration SINGLE SINGLE SINGLE SINGLE
Minimum DC current gain (hFE) 20 20 20 20
JESD-30 code R-PSFM-T3 R-PSFM-T3 R-PSFM-T3 R-PSFM-T3
Number of components 1 1 1 1
Number of terminals 3 3 3 3
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT FLANGE MOUNT
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
Polarity/channel type NPN NPN NPN NPN
surface mount NO NO NO NO
Terminal form THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE SINGLE SINGLE
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
transistor applications SWITCHING SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON SILICON
Nominal transition frequency (fT) 3 MHz 3 MHz 3 MHz 3 MHz
Maker CDIL[Continental Device India Pvt. Ltd.] - CDIL[Continental Device India Pvt. Ltd.] CDIL[Continental Device India Pvt. Ltd.]

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