PH1516-60 datasheet, PDF - EEWORLD Datasheet

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PH1516-60: DescriptionL BAND, Si, NPN, RF POWER TRANSISTOR; CategoryDiscrete semiconductor The transistor; File Size194KB，3 Pages; ManufacturerTE Connectivity; Websitehttp://www.te.com; Environmental Compliance

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PH1516-60 Overview

L BAND, Si, NPN, RF POWER TRANSISTOR

PH1516-60 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	TE Connectivity
Reach Compliance Code	unknown
ECCN code	EAR99
Shell connection	EMITTER
Maximum collector current (IC)	10 A
Collector-emitter maximum voltage	24 V
Configuration	SINGLE
highest frequency band	L BAND
JESD-30 code	R-CDFM-F2
Number of components	1
Number of terminals	2
Package body material	CERAMIC, METAL-SEALED COFIRED
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Peak Reflow Temperature (Celsius)	NOT SPECIFIED
Polarity/channel type	NPN
Certification status	Not Qualified
surface mount	YES
Terminal form	FLAT
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED
transistor applications	AMPLIFIER
Transistor component materials	SILICON

PH1516-60 Preview

z-,-3

y--z

.-- =:

---

----= z

z =

an AMP company

Wireless Bipolar Power Transistor,

1450 - 1550

MHz

Features

Designed for Linear Amplifier Applications

Class AB: -30 dBc Typ 3rd IMD at 60 Watts PEP

Class A: +53 dBm Typ 3rd Order Intercept Point

Common Emitter Configuration

Internal Input Impedance Marching

Diffused Emitter Ballasting

‘f

60W

PHI516160

.22st.010

C5.72t.25)

.^^

Absolute Maximum Ratings at 25°C

Parameter

Symbol

Rating

Units

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

CollectorCurrent

Power Dissipation

JunctionTemperature

Storage Temperature

Thermal Resistance

Vcm

VCES

VEm

T srt

8JC

(

3.0

116

200

-55 to +150

1.5

]

“C

“CIW

UNLESS

OTHERWISE

NOTED, TOLERANCES

ARE

INCHES t.005

<,,,ILUnETERS

r,13M,,,>

Electrical Characteristics

at 25°C

Typical Optimum Device Impedances

F(MHr)

Z,(Q)

2.2 + j5.0

2.7+j4.5

2.1 + j3.7

1450

1500

1550

Wireless Bipolar Power Transistor, 60W

PH1516-60

RF Test Fixture

“cc

CR1

INPUT

50 OHMS

DUTPUT

OHMS

ARTWORK

DIMENSIONS

MILS

Cl c2 c3 c4

CR1

RLl

18pF

ATC

SIZE

CAPACITOR

5OOOpF CHIP CAPACITOR

50 VOLT

5OuF

ELECTROLYTIC

lN5417

7 TURNS

PH1516-60

4.7 OHM

10 TURNS

DIODE

l/2

Nil.

WATT

AWG CIN

,125'

DIA

RESISTOR

AWG

IIN

OHM

10.5

BUARD

TYPE:

l/4

WATT

RESISTOR

ROGERS

601Os5

,025"THICK,

Wireless Bipolar Power Transistor,

60W

PH1516-60

v2.00

Typical Broadband Performance

Curves

GAIN-EFFICIENCY

P,,=60

vs FREQUENCY

- loo

. 60

OUTPUT

POWER vs COLLECTOR

VOLTAGE

W PEP I’,,=26 V I,,=25 mA

1,,=25mA F1=1500.0MHz F2=1500.1 MHz

Gain

- 60

CW Efficiency

.40--

+45

Tone

- 20

Efficiency

7 -

6 - . s

1450

1500

1550

FREQUENCY

(MHz)

COLLECTOR

VOLTAGE (V)

UMIIY

vs rouT

-15

IMD vs P,,

F1=1500.0 MHz F2=1500.1 MHz Vcc=26 V I,,=25 mA

l500.0MHz Fl=lSOO.l MHz

3.5 A

MessAB

30.

P,,

P,,PEPin

dBm

IMD vs P,,

F1=1500.0 MHz F2=1500.1 MHZ Vcc=26 V 1,,=200 mA

IMD vs P,,

F1=1500.0 MHz F2=1500.1 MHz V,,=20 V 1,,=3.5 A

Class A

3rd

PaPEP

in dBm2

%P,,PEP~B

dBm

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