M312L3223EG0-CCC datasheet, PDF

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M312L3223EG0-CCC: DescriptionDDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184; Categorystorage storage; File Size713KB，30 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/

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M312L3223EG0-CCC Overview

DDR DRAM Module, 32MX72, 0.65ns, CMOS, DIMM-184

M312L3223EG0-CCC Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	SAMSUNG
Parts packaging code	DIMM
package instruction	DIMM, DIMM184
Contacts	184
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	SINGLE BANK PAGE BURST
Maximum access time	0.65 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	200 MHz
I/O type	COMMON
JESD-30 code	R-XDMA-N184
memory density	2415919104 bit
Memory IC Type	DDR DRAM MODULE
memory width	72
Humidity sensitivity level	1
Number of functions	1
Number of ports	1
Number of terminals	184
word count	33554432 words
character code	32000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32MX72
Output characteristics	3-STATE
Package body material	UNSPECIFIED
encapsulated code	DIMM
Encapsulate equivalent code	DIMM184
Package shape	RECTANGULAR
Package form	MICROELECTRONIC ASSEMBLY
Peak Reflow Temperature (Celsius)	225
power supply	2.6 V
Certification status	Not Qualified
refresh cycle	8192
self refresh	YES
Maximum standby current	0.42 A
Maximum slew rate	3.45 mA
Maximum supply voltage (Vsup)	2.7 V
Minimum supply voltage (Vsup)	2.5 V
Nominal supply voltage (Vsup)	2.6 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	NO LEAD
Terminal pitch	1.27 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	NOT SPECIFIED

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256MB, 512MB, 1GB Registered DIMM

DDR SDRAM

DDR SDRAM Registered Module

184pin Registered Module based on 256Mb E-die

with 72-bit ECC

66 TSOP-II and 60 ball FBGA

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

Rev. 1.0 July 2005

256MB, 512MB, 1GB Registered DIMM

Table of Contents

DDR SDRAM

1.0 Ordering Information................................................................................................................... 4

2.0 Operating Frequencies................................................................................................................ 4

3.0 Feature.......................................................................................................................................... 4

4.0 Pin Configuration (Front side/back side) ................................................................................. 5

5.0 Pin Description ............................................................................................................................ 5

6.0 Functional Block Diagram .......................................................................................................... 6

6.1 256MB, 32M x 72 ECC Module (M312L3223ET(U)S)

........................................................................... 6

6.2 512MB, 64M x 72 ECC Module (M312L6423ET(U)S)

.......................................................................... 7

6.3 512MB, 64M x 72 ECC Module (M312L6420ET(U)S)

.......................................................................... 8

6.4 1GB, 128M x 72 ECC Module (M312L2828ET(U)0)

............................................................................ 9

6.5 256MB, 32M x 72 ECC Module (M312L3223EG(Z)0).......................................................................................

6.6 512MB, 64M x 72 ECC Module (M312L6423EG(Z)0)

........................................................................ 11

6.7 512MB, 64M x 72 ECC Module (M312L6420EG(Z)0).......................................................................................

6.8 1GB, 128M x 72 ECC Module (M312L2820EG(Z)0) .........................................................................................

7.0 Absolute Maximum Ratings...................................................................................................... 14

8.0 Power & DC Operating Conditions (SSTL_2 In/Out) .............................................................. 14

9.0 DDR SDRAM IDD spec table ..................................................................................................... 15

9.1 M312L3223ET(U)S [ (32M x 8) * 9 , 256MB Module ]

........................................................................ 15

9.2 M312L6423ET(U)S [ (32M x 8) * 18 , 512MB Module ]

....................................................................... 15

9.3 M312L6420ET(U)S [ (64M x 4) * 18 , 512MB Module ] .....................................................................................

9.4 M312L2828ET(U)0 [ (st.128M x 4) * 18 , 1GB Module ]

..................................................................... 16

9.5 M312L3223EG(Z)0 [ (32M x 8) * 9 , 256MB Module ].......................................................................................

9.6 M312L6423EG(Z)0 [ (32M x 8) * 18 , 512MB Module ]

...................................................................... 17

9.7 M312L6420EG(Z)0 [ (64M x 4) * 18 , 512MB Module ]

....................................................................... 18

9.8 M312L2820EG(Z)0 [ (64M x 4) * 36, 1GB Module ]

........................................................................... 18

10.0 AC Operating Conditions........................................................................................................ 19

11.0 Input/Output Capacitance ....................................................................................................... 19

12.0 AC Timming Parameters & Specifications ............................................................................ 20

13.0 System Characteristics for DDR SDRAM .............................................................................. 21

14.0 Component Notes.................................................................................................................... 22

15.0 System Notes ........................................................................................................................... 23

16.0 Command Truth Table............................................................................................................. 24

17.0 Physical Dimensions............................................................................................................... 25

17.1 32M x 72 (M312L3223ET(U)S)

.................................................................................................... 25

17.2 64M x 72 (M312L6423ET(U)S), (M312L6420ET(U)S)

...................................................................... 26

17.3 st.128M x 72 (M312L2828ET(U)0)

............................................................................................... 27

17.4 32M x 72 (M312L3223EG(Z)0)

.................................................................................................... 28

17.5 64M x 72 (M312L6423EG(Z)0), (M312L6420EG(Z)0)

....................................................................... 29

17.6 128M x 72 (M312L2820EG(Z)0)

................................................................................................... 30

Rev. 1.0 July 2005

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